Multi-axis piezoresistive acceleration sensor with self-detection function and manufacturing method thereof
An acceleration sensor and self-detection technology, applied in multi-dimensional acceleration measurement, acceleration measurement using inertial force, etc., can solve problems such as axial crosstalk, complexity of stress state, and lack of wafer-level self-detection function, etc., to reduce the axis Small axial crosstalk and axial crosstalk ensure the effect of zero output
Active Publication Date: 2016-12-07
GUANGDONG HEWEI INTEGRATED CIRCUIT TECH
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[0004] U.S. Patent US2006018542 discloses a piezoresistive multi-axis acceleration sensor that grows a mass on a suspended film and selects the best position on the surface of the suspended film to make a piezoresistive multi-axis acceleration sensor. Meta-simulation selects the best position of the piezoresistive bar for each axis acceleration detection, but due to the complexity of a point stress state, there is always axial crosstalk; in addition, it does not have a wafer-level self-test function, which is not conducive to the industrial testing of chips
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[0044] attached figure 1 It is a schematic structural diagram of a multi-axis piezoresistive acceleration sensor with self-detection function according to the first embodiment of the present invention, figure 2 It is a flow chart of the manufacturing method of the first embodiment of the present invention, Figures 3A-3N It is a schematic process flow diagram of the manufacturing method of the first embodiment of the present invention.
[0045] Such as figure 1 , 2 , 3A-3N, a multi-axis piezoresistive acceleration sensor with self-detection function and its manufacturing method:
[0046] see Figure 3A , the embodiment of the present invention is based on an SOI wafer 1 , which is provided with a substrate 101 , an intermediate oxide layer 102 and a device layer 103 in sequence. Preferably, the doping type of the device layer 103 is N type.
[0047] see figure 2 , step 201, see also Figure 3Ba-3Bb , 3Ba is a schematic cross-sectional view, and 3Bb is a schematic top ...
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The invention provides a multi-axis piezoresistive acceleration sensor with a self-detection function. The sensor is based on an SOI wafer. The SOI wafer is sequentially provided with a substrate, a middle oxidization layer and a device layer. The acceleration sensor comprises at least one in-plane piezoresistive acceleration sensor body with the self-detection function and at least one out-plane piezoresistive acceleration sensor body with the self-detection function, piezoresistive strips are formed on part of the side wall of a cantilever beam of the at least one in-plane piezoresistive acceleration sensor body, and self-detection electrodes are formed on part of the side wall of the cantilever beam. The invention further provides a manufacturing method of the multi-axis piezoresistive acceleration sensor with the self-detection function. The structure and the machining technology of the multi-axis piezoresistive acceleration sensor for wafer-level self-detection are obtained.
Description
technical field [0001] The invention relates to semiconductor manufacturing technology, in particular to a multi-axis piezoresistive acceleration sensor with self-detection function and a manufacturing method thereof. Background technique [0002] At present, wafer-level calibration and testing of piezoresistive acceleration sensors is very difficult. There is no mature technology in the industry. Some test manufacturers (such as AFORE in Finland) provide wafer-level piezoresistive acceleration test solutions, but special test fixtures and probe cards need to be customized, so that the investment in fixed assets and High cost. [0003] At present, the piezoresistive acceleration sensor can only be tested at the module level by using the test bench after being packaged into a module product. Once the acceleration sensor fails, the loss includes not only the acceleration sensor, but also the packaging cost of the module and other components integrated in the module, such as ...
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Inventor 周志健朱二辉陈磊杨力建邝国华
Owner GUANGDONG HEWEI INTEGRATED CIRCUIT TECH