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nmos transistor and method of making the same

A technology of transistors and semiconductors, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as work function drift

Active Publication Date: 2021-09-07
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the actual use shows that the work function of the above adjustments often drifts in the direction of increasing

Method used

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  • nmos transistor and method of making the same
  • nmos transistor and method of making the same
  • nmos transistor and method of making the same

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Embodiment Construction

[0057] In order to make the above objects, features and advantages of the present invention more comprehensible, specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0058] figure 1 is a schematic structural diagram of an NMOS transistor in an embodiment of the present invention. refer to figure 1 shown, the NMOS transistor consists of:

[0059] A semiconductor substrate 1, a gate structure 2 located on the surface of the semiconductor substrate 1, and a source-drain region 3 in the semiconductor substrate 1 located on both sides of the gate structure 2; wherein the gate structure 2 at least includes:

[0060] A high-K gate dielectric layer 21, a work function layer 24 on the high-K gate dielectric layer, a boron ion diffusion barrier layer 25 on the work function layer 24, a metal gate diffusion barrier layer 26 on the boron ion diffusion barrier layer 25, and The metal gate 27 located on the metal...

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Abstract

An NMOS transistor and a manufacturing method thereof. A boron ion diffusion barrier layer is introduced between the titanium-based compound work function layer and the tungsten metal gate diffusion barrier layer, which cuts off the impact of Cl-containing by-products in the titanium-based compound work function layer on the tungsten metal gate. The adsorption of the introduced B is formed, thus avoiding the shift of the work function of the titanium-based compound work function layer to the direction of increase caused by the introduction of B. In addition, the boron ion diffusion barrier does not take up much space, which is beneficial to the subsequent filling of other materials in the groove. This benefit is particularly obvious as the size of semiconductor devices continues to decrease.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to an NMOS transistor and a manufacturing method thereof. Background technique [0002] In semiconductor manufacturing, especially in VLSI, the main device is metal-oxide-semiconductor field-effect transistor (MOS transistor). Since the advent of MOS transistors, their geometric dimensions have been continuously reduced according to Moore's Law, but the physical limits of the devices make it increasingly difficult to scale them down. Among them, in the field of MOS transistor manufacturing, the most challenging problem is the leakage current from the gate to the substrate caused by the reduction of the thickness of the polysilicon and silicon dioxide gate dielectric layers in the process of device scaling down in the traditional MOS process. . [0003] In order to solve the above problems, in the prior art, a high-K (permittivity) gate dielectric material is us...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/49H01L21/28H01L21/336
Inventor 赵杰
Owner SEMICON MFG INT (SHANGHAI) CORP