Low-frequency and low-noise measurement amplifier

A technology for measuring amplifiers and low noise, which is applied in the field of measurement and can solve problems such as inability to meet the design requirements of low-frequency amplifiers and difficulty in noise measurement

Inactive Publication Date: 2016-12-07
孙祝兵
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Problems solved by technology

[0002] Low-frequency noise is an important sensitive parameter to characterize the quality and reliability of semiconductor devices. However, the low-frequency noise of electronic devices is extremely weak at room temperature, and its noise voltage is often concentrated at the nV level, which brings great difficulties to the measurement of noise.
[0003] GaAsFET (gallium arsenide field effect transistor) has an ultra-l

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[0015] The technical solutions of the present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0016] Such as figure 1 As shown, a low-frequency and low-noise measurement amplifier includes four parts: a noise matching transformer, a preamplifier circuit, a bandpass filter and a postamplifier circuit;

[0017] Such as figure 2 As shown, the overall design of the preamplifier includes two parts: designing a transformer that can match the impedance of the signal source; designing a low-noise preamplifier. The functions of these two parts are: one is to improve the anti-interference ability of the circuit; the other is to suppress the zero drift, reduce the noise floor, and improve the noise performance of the input terminal.

[0018] Such as image 3 As shown, the purpose of the post-amplification circuit design is to further increase the gain of the amplifier, so that the total gain reaches 100,000 times; by adjustin...

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Abstract

The invention relates to a low-frequency and low-noise measurement amplifier. The low-frequency and low-noise measurement amplifier is characterized by comprising a noise matching transformer, a front-stage amplification circuit, a band-pass filter and a post-stage amplification circuit. The noise coefficient and the common-mode rejection ratio of the noise measurement amplifier disclosed by the invention are far greater than numerical values of most of low-frequency and low-noise amplifiers on the market; and furthermore, a design circuit satisfies requirements on low-frequency noise measurement in a 0.90-80.20 kHz range.

Description

technical field [0001] The invention belongs to the technical field of measurement, and in particular relates to a low-frequency and low-noise measurement amplifier. Background technique [0002] Low-frequency noise is an important sensitive parameter to characterize the quality and reliability of semiconductor devices. However, the low-frequency noise of electronic devices is extremely weak at room temperature, and its noise voltage is often concentrated at the nV level, which brings great difficulties to the measurement of noise. [0003] GaAsFET (gallium arsenide field effect transistor) has an ultra-low noise figure and is widely used to design pre-low noise amplifiers. However, GaAsFET is suitable for high-frequency, ultra-high-frequency and microwave radio frequency amplifier circuits, and cannot meet the requirements of low-frequency amplifiers. Therefore, it is urgent to design an amplifier that can be applied to low-frequency ultra-low noise amplification and has an...

Claims

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Application Information

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IPC IPC(8): H03F1/26H03F3/45G01R31/26
CPCH03F1/26G01R31/2646H03F3/45484
Inventor 孙祝兵高鹏
Owner 孙祝兵
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