This invention discloses an online defect detection method in the fabrication process of
silicon carbide chips, specifically relating to the field of
semiconductor defect detection technology. The method adaptively adjusts
laser parameters based on the quality of real-time acquired
photoluminescence signals to excite hidden defects and generate characteristic signals. Time-resolved spectral acquisition of the signals is performed, and
background noise and self-absorption effects are decoupled using a nonlinear separation model to extract hidden defect features. The
signal distribution and
noise floor are monitored in real-time, and the
discrimination threshold is dynamically adjusted to obtain candidate defect regions and their characteristics. Different detection
modes are sequentially activated, and the most sensitive excitation method is selected to confirm the defect type, density, and location. This invention adaptively adjusts
laser parameters based on the quality of real-time acquired
photoluminescence signals, enabling stable excitation of hidden defects under dynamic conditions. By decoupling
background noise and self-absorption effects, pure defect feature signals are extracted. Dynamic adjustment of the
discrimination threshold and fusion of three detection
modes achieve high-confidence defect identification.