Joining process of laminated multi-layer thick film circuit
A thick film circuit and process technology, applied in the direction of circuits, electrical components, electrical solid devices, etc., can solve the problems of difficult production, high production cost, multiple alignment deviations, etc.
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Embodiment 1
[0213] The invention relates to a connection process of laminated multi-layer thick-film circuits, which connects thick-film circuit diaphragms that have completed multi-layer wiring, hole metallization, and completed the production and adjustment of thick-film components. The specific connection process is:
[0214] Print S protective glaze on the surface to be connected of each thick film circuit diaphragm;
[0215] Then print a plurality of E material block connections on the common corresponding points between the thick film circuit diaphragms;
[0216] Finally, the surfaces to be joined of the thick-film circuit diaphragms are stacked together and placed in a sagger mold, and sintered at 480-520° C. for 20-30 minutes.
[0217] The method of the present invention is suitable for the connection of two thick-film circuit diaphragms, and is also suitable for the connection of three or other numbers.
[0218] Taking the connection of two pieces as an example, the specific pr...
Embodiment 2
[0272]The invention provides a connection process of laminated multi-layer thick-film circuits, which is used to connect the thick-film circuit diaphragms that have completed multi-layer wiring, hole metallization, and completed the production and adjustment of thick-film components. The specific connection process is:
[0273] Print low-temperature silver paste F conduction band points or conduction band lines or conduction band blocks on the conduction band connection points designed for each thick film circuit diaphragm that needs to be electrically connected;
[0274] Then print S protective glaze on the surface to be connected of each thick film circuit diaphragm;
[0275] Then print a plurality of E material block connections on the common corresponding points between the thick film circuit diaphragms;
[0276] Finally, the surfaces to be joined of the thick-film circuit diaphragms are stacked together and placed in a sagger mold, and sintered at 480-520° C. for 20-30 m...
Embodiment 3
[0347] A connection process for laminated multilayer thick film circuits, other features are the same as those in Embodiment 1 or 2, the difference is that:
[0348] According to parts by weight, the S protective glaze contains the raw materials of the following parts:
[0349] A: 55-82;
[0350] B:12-45;
[0351] C: 35-46; or
[0352] A: 55-78;
[0353] B:22-45;
[0354] C: 35-45; or
[0355] A: 55-65;
[0356] B:35-45;
[0357] C: 35-45.
[0358] Specifically, A contains the following raw materials:
[0359] SiO 2 :48;
[0360] TiO 2 :2;
[0361] ZnO: 4;
[0362] KF: 12;
[0363] Dehydrated Borax: 12. The softening temperature of component A is 480 degrees Celsius. or
[0364] SiO 2 :46;
[0365] TiO 2 :2;
[0366] ZnO: 5;
[0367] KF: 16;
[0368] Dehydrated Borax: 10. The softening temperature of component A is 500 degrees Celsius. or
[0369] SiO 2 :46;
[0370] TiO 2 :2;
[0371] ZnO: 6;
[0372] KF: 15;
[0373] Dehydrated borax: 11; the so...
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