Manufacturing method of active area of DMOS device and the DMOS device

A technology for active regions and devices, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as long reverse recovery time and low switching speed

Active Publication Date: 2017-01-04
FOUNDER MICROELECTRONICS INT
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] Embodiments of the present invention provide a method for fabricating an active region of a DMOS device and a DMOS device, which are used to solve the problem tha...

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  • Manufacturing method of active area of DMOS device and the DMOS device
  • Manufacturing method of active area of DMOS device and the DMOS device
  • Manufacturing method of active area of DMOS device and the DMOS device

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Embodiment Construction

[0048] In order to make the purpose, technical solutions and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings. Obviously, the described embodiments are only some of the embodiments of the present invention, rather than all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0049] figure 1 A schematic flow chart corresponding to a method for manufacturing an active region of a DMOS device provided by an embodiment of the present invention, the method includes:

[0050] Step 101, sequentially forming an N-type epitaxial layer, a gate oxide layer and a doped polysilicon layer on an N-type substrate;

[0051] Step 102, etching the doped polysilicon layer and the gate oxide layer to form a gate region and a g...

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Abstract

An embodiment of the invention discloses a manufacturing method of an active area of a double-diffusion metallic oxide semiconductor DMOS device and the DMOS device. The method is characterized by forming an N-type epitaxial layer, a gate oxide layer and a doped polysilicon layer on an N-type substrate and forming a gate area and a groove; forming a P-type body area in the N-type epitaxial layer and forming an N-type source area in the P-type body area; etching to form a schottky contact area; and depositing a metal layer, forming the schottky contact region in the schottky contact area, and forming a source electrode and a drain electrode. In the embodiment of the invention, the schottky contact regions are formed in the metal layer and the N-type epitaxial layer. When the DMOS device works in a positive conduction state, storage charges in a drift region and reverse recovery charges are reduced. When the DMOS device is in a reverse blocking-up state, a schottky contact electric field is reduced, and a schottky contact breakdown voltage is increased and a leakage current is reduced so that the DMOS device satisfies breakdown voltage and electric leakage requirements during an application process.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for manufacturing an active region of a DMOS device and a DMOS device. Background technique [0002] A DMOS device is a type of MOSFET that uses diffusion to form the transistor region. MOSFET is a widely used power switching device, which has the advantages of high input impedance, low loss, fast switching speed, no secondary breakdown, wide safe working area, and good dynamic performance. [0003] In some existing power switching circuits that require reverse current to flow through active switching devices, MOSFETs must conduct in reverse, for example, DC to AC inverter switching power supplies for speed-adjustable motor drives, and for motors Controlled, DC converter with regenerative braking, etc. [0004] However, the lifetime of the drift region of the MOSFET device manufactured by the traditional process is relatively long, and there is a large amount of...

Claims

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Application Information

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IPC IPC(8): H01L21/336H01L21/265H01L29/78
Inventor 姜春亮蔡远飞何昌李理
Owner FOUNDER MICROELECTRONICS INT
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