Bidirectional transient voltage suppression device and method of manufacturing the same

Abstract

The invention provides a bidirectional transient voltage suppression device and a manufacturing method thereof. The method comprises the steps of etching a plurality of grooves in a silicon wafer substrate on which a doped silicon layer grows; carrying out thermal oxidation on a silicon wafer in which the plurality of grooves are formed, and filling each groove with silicon oxide and preparing a doped region; growing a dielectric layer on the silicon wafer of forming the doped region; preparing a plurality of metal holes in the dielectric layer and growing a metal layer on the lower surface of the silicon wafer substrate; and equally dividing the plurality of metal holes into two parts to serve as a first input / output port and a second input / output port respectively, and serving the metal layer as a third input / output port. Through the bidirectional transient voltage suppression device and the manufacturing method thereof, the manufacturing cost of the bidirectional transient voltage suppression device can be reduced while the performance of the bidirectional transient voltage suppression device is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a manufacturing method of a bidirectional transient voltage suppression device and a bidirectional transient voltage suppression device. Background technique [0002] Transient Voltage Suppressor (TVS) is a solid-state semiconductor device specially designed to protect sensitive semiconductor devices from transient voltage surge damage. It has small clamping coefficient, small size, fast response, and leakage Due to the advantages of small current and high reliability, it has been widely used in voltage transient and surge protection. Low-capacitance TVS is suitable for protection devices of high-frequency circuits, because it can reduce the interference of parasitic capacitance on the circuit and reduce the attenuation of high-frequency circuit signals. Low capacitance diodes require high resistivity grown on highly doped P-type substrates. [0003] Electrostatic discha...

AI Technical Summary

Problems solved by technology

[0005] The currently commonly used trench TVS can only achieve unidirectional protection. If bidirectional protection is required, multiple TVSs need to be connected in series or in parallel, which increases the device area and manufacturing cost.

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