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Growth method of gallium arsenide single crystal

A growth method, gallium arsenide technology, applied in the field of gallium arsenide single crystal growth, can solve the problems that restrict the development and application of high-brightness LEDs, and solve the problems of low crystal growth rate, meet the preparation requirements, and reduce production costs Effect

Active Publication Date: 2018-07-06
广东先导微电子科技有限公司
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  • Application Information

AI Technical Summary

Problems solved by technology

However, since the PBN crucible is still used, it is still impossible to fundamentally avoid the pollution of B elements, but the content of B elements in single crystals is reduced, which undoubtedly restricts the development and application of high-brightness LEDs.

Method used

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  • Growth method of gallium arsenide single crystal

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Embodiment 1

[0026] (1) Grind four 2-inch quartz crucibles (numbered 1#, 2#, 3#, 4#) with 100-mesh diamond sandpaper until the surface is smooth without obvious steps, then wash with deionized water, and then wash with 10% Wash with dilute NaOH solution for 15 minutes, then wash with deionized water, and finally wash with hot water at 60°C;

[0027] (2) Put the cleaned and dried quartz crucible into a quartz tube with high-purity gallium, wherein the amount of high-purity gallium in the quartz tube is to make the melted gallium soak the quartz crucible completely, and then put the quartz tube Put it into a vertical heating furnace body, vacuumize the jig on the quartz tube, turn on the vacuum pump to vacuumize, and wait until the vacuum degree is stable to 10 -1 After Pa, turn off the vacuum pump to stop vacuuming and fill the quartz tube with argon gas. After the pressure in the quartz tube reaches a standard atmospheric pressure, close the gas valve to stop filling the argon gas, and tur...

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Abstract

The invention provides a growing method of gallium arsenide monocrystalline. The method comprises the following components: (1) a quartz crucible is cleaned; (2) the quartz crucible is placed in a quartz tube which contains gallium of high purity, vacuum-pumping and inflation operation are repeatedly carried out for the quartz tube, and finally inert gas or nitrogen is filled; (3) the quartz tube is heated till the temperature in the quartz tube reaches to 1240 DEG C or above and insulation is carried out, and the quartz tube is cooled to room temperature; (4) the quartz crucible is taken out from the quartz tube and is immersed in acid, deionized water is used for washing, absolute ethyl alcohol is used for carrying out dehydration treatment, and the quartz crucible is placed in a drying box for standby; (5) seed crystal, polycrystalline materials, and the balance being arsenic are placed in the quartz crucible in order according to charging requirements, the quartz crucible is placed in a quartz ampoule, and vacuum-pumping, baking and soldering and sealing treatment are carried out; (6) a traditional VGF method is used for accomplishing the growth of gallium arsenide monocrystalline. PBN crucibles are not used, a liquid sealing agent B2O3 is not used, and GaAs monocrystalline is not polluted by extra introduction of B element from the source.

Description

technical field [0001] The invention relates to the field of single crystal growth, in particular to a method for growing a gallium arsenide single crystal. Background technique [0002] Gallium arsenide (GaAs) is the second-generation semiconductor material after Ge and Si. The methods used to mass produce GaAs crystals include the traditional liquid-enclosed Czochralski method (LEC method) and the horizontal boat production method (HB method). At the same time, the vertical gradient solidification method (VGF method), the vertical Bridgman method (VB method) and the vapor pressure controlled Czochralski method (VCG method) which have the advantages of the above two methods have also been developed, and 4~ 6 inch large diameter GaAs crystal. [0003] The current mature VGF GaAs single crystal growth technology is to put the GaAs polycrystalline material into a pyrolytic boron nitride (PBN) crucible, then seal the GaAs polycrystalline material by vacuuming and other method...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/42C30B11/00
Inventor 雷仁贵易明辉
Owner 广东先导微电子科技有限公司
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