The invention provides a growing method of gallium arsenide monocrystalline. The method comprises the following components: (1) a quartz crucible is cleaned; (2) the quartz crucible is placed in a quartz tube which contains gallium of high purity, vacuum-pumping and inflation operation are repeatedly carried out for the quartz tube, and finally inert gas or nitrogen is filled; (3) the quartz tube is heated till the temperature in the quartz tube reaches to 1240 DEG C or above and insulation is carried out, and the quartz tube is cooled to room temperature; (4) the quartz crucible is taken out from the quartz tube and is immersed in acid, deionized water is used for washing, absolute ethyl alcohol is used for carrying out dehydration treatment, and the quartz crucible is placed in a drying box for standby; (5) seed crystal, polycrystalline materials, and the balance being arsenic are placed in the quartz crucible in order according to charging requirements, the quartz crucible is placed in a quartz ampoule, and vacuum-pumping, baking and soldering and sealing treatment are carried out; (6) a traditional VGF method is used for accomplishing the growth of gallium arsenide monocrystalline. PBN crucibles are not used, a liquid sealing agent B2O3 is not used, and GaAs monocrystalline is not polluted by extra introduction of B element from the source.