Layout pattern and forming method of 8T-static random access memory

Abstract

The invention discloses a layout pattern and a forming method of an 8T-static random access memory (8T-SARM). The layout pattern comprises a first diffusion zone, a second diffusion zone and a third diffusion zone which are located on a substrate, wherein a limit spacing area is formed between the third diffusion zone and the first diffusion zone, and the limit spacing area is directly contacted with the first diffusion zone and the third diffusion zone; and a first additional diffusion zone, a second additional diffusion zone and a third additional diffusion zone, which are respectively arranged along the peripheries of the first diffusion zone, the second diffusion zone and third diffusion zone, and respectively directly contacted with the first diffusion zone, the second diffusion zone and third diffusion zone, wherein the additional diffusion zones are not located within the range of the limit spacing area.

Description

technical field [0001] The present invention relates to a static random access memory (static random access memory, SRAM), especially a layout pattern of an eight-transistor static random access memory (8T-SRAM). Background technique [0002] An embedded static random access memory (embedded static random access memory, embedded SRAM) includes a logic circuit and the static random access memory connected to the logic circuit. The SRAM itself is a volatile memory cell, that is, when the power supplied to the SRAM disappears, the stored data will be erased at the same time. Static random access memory stores data by using the conductive state of the transistor in the storage unit. The design of static random access memory is based on mutual coupling transistors. There is no problem of capacitor discharge, and it does not need to be continuously charged to keep data. Loss, that is, the action of not needing to update the memory, is different from that of the dynamic random acc...

AI Technical Summary

Problems solved by technology

[0003] However, with the reduction of manufacturing process line width and exposure pitch, it is difficult to use the existing structure to expose the desired pattern in the manufacture of SRAM components.

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