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Fin-type field effect transistor and formation method thereof

A fin field effect and transistor technology, which is applied in the fields of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as poor transistor performance and reliability, and achieve the effect of improving performance and smooth edges and corners.

Active Publication Date: 2017-01-11
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] FinFETs formed with prior art techniques suffer from poorer performance and reliability as feature sizes shrink further

Method used

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  • Fin-type field effect transistor and formation method thereof
  • Fin-type field effect transistor and formation method thereof
  • Fin-type field effect transistor and formation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] As the feature size shrinks further, the performance and reliability of the FinFETs formed by the prior art are poor.

[0032] Figure 1 to Figure 6 It is a structural schematic diagram of the formation process of the fin field effect transistor in an embodiment of the present invention.

[0033] refer to figure 1 , providing a semiconductor substrate 100 ; forming a patterned mask layer 101 on the surface of the semiconductor substrate 100 .

[0034] The material of the semiconductor substrate 100 is silicon.

[0035] The patterned mask layer 101 defines the positions of the subsequently formed fins.

[0036] The material of the patterned mask layer 101 is photoresist.

[0037] combined reference Figure 2 to Figure 4 , with a patterned mask layer 101 (reference figure 1 ) is a mask to etch the semiconductor substrate 100 to form a plurality of protruding fins 120 .

[0038] image 3for FinFETs along the figure 2 Sectional view of the extension direction of ...

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PUM

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Abstract

The invention relates to a fin-type field effect transistor and a formation method thereof. The method includes the following steps that: a semiconductor substrate is provided; a sacrificial layer is formed at the surface of the semiconductor substrate; an opening is formed in the sacrificial layer, and the opening exposes a part of the surface of the semiconductor substrate, and the width of the top of the opening is larger than the width of the bottom of the opening; a fin portion material layer is formed in the opening, and the top surface of the fin portion material layer is flush with the top surface of the sacrificial layer; the sacrificial layer is removed; and edge corner rounding treatment is performed on the fin portion material layer, so that a fin portion can be formed. With the formation method of the fin-type field effect transistor adopted, the performance of the fin-type field effect transistor can be improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a fin field effect transistor and a forming method thereof. Background technique [0002] MOS transistors are one of the most important components in modern integrated circuits. The basic structure of a MOS transistor includes: a semiconductor substrate; a gate structure located on the surface of the semiconductor substrate, and source and drain regions located in the semiconductor substrate on both sides of the gate structure. The MOS transistor generates a switching signal by applying a voltage to the gate structure and adjusting the current through the channel at the bottom of the gate structure. [0003] With the development of semiconductor technology, the ability of the traditional planar MOS transistor to control the channel current becomes weaker, resulting in serious leakage current. Fin Field Effect Transistor (Fin FET) is an emerging multi-gate device, whic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L29/78
CPCH01L29/66795H01L29/7854
Inventor 赵猛
Owner SEMICON MFG INT (SHANGHAI) CORP