Method for forming fin field effect transistor

Abstract

A fin-type field effect transistor formation method comprises steps of providing a semiconductor substrate with a P-type region and an N-type region, wherein a semiconductor substrate surface in the P-type region has a first fin part and a first grid structure crossing the first fin part, and a semiconductor substrate surface in the N-type region has a second fin part and a second grid structure crossing the second fin part; carrying out first light dope injection on the first fin part at two sides of the first grid structure to form a first light dope region; after the first light dope injection, forming a first side wall at two sides of the first grid structure; forming a first source-drain area on the surface of the first fin part; forming a second side wall at two sides of the second grid structure, wherein the second side wall covers a part of the second fin part, and the second side wall is thinner than the first side wall; and forming a second source-drain area on the surface of the second fin part, wherein the second source-drain area has second ions, diffusing the second ions in the second fin part covered by the second side wall to form a second light dope region. The fin-type field effect transistor formation method improves the performance of a fin-type field effect transistor.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for forming a fin field effect transistor. Background technique [0002] MOS transistors are one of the most important components in modern integrated circuits. The basic structure of a MOS transistor includes: a semiconductor substrate; a gate structure located on the surface of the substrate, and source and drain regions located in the semiconductor substrate on both sides of the gate structure. MOS transistors generate switching signals by applying a voltage to the gate and regulating the current through the channel at the bottom of the gate structure. [0003] With the development of semiconductor technology, the ability of the traditional planar MOS transistor to control the channel current becomes weaker, resulting in serious leakage current. Fin Field Effect Transistor (Fin FET) is an emerging multi-gate device, which generally includes a fin protrudin...

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Problems solved by technology

[0005] FinFETs formed with prior art techniques suffer from poorer performance and reliability as feature sizes shrink further

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