Fabrication method and structure of an uncooled infrared focal plane detector microbridge
A focal plane detector, uncooled infrared technology, applied in electrical radiation detectors and other directions, can solve the problems of not much contribution, no signal response, contribution, etc., to reduce the proportion of invalid absorption, improve absorption efficiency, and improve absorption The effect of proportions
Active Publication Date: 2019-10-18
YANTAI RAYTRON TECH
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The incident light radiation is absorbed by the top platform layer and the bottom bridge leg structure, and the infrared radiation absorbed by the bottom bridge leg does not contribute much to the temperature rise of the top platform layer, which leads to the fact that the incident infrared radiation does not really transform into the temperature of the sensitive area. It does not contribute to the signal response, and the response to 12um and smaller pixels is low, which cannot meet the imaging requirements of high-efficiency uncooled infrared detectors
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[0053] The principles and features of the present invention are described below in conjunction with the accompanying drawings, and the examples given are only used to explain the present invention, and are not intended to limit the scope of the present invention.
[0054] An embodiment of the present invention provides a method for making an uncooled infrared focal plane detector microbridge, see Figure 1 to Figure 8 , its specific process steps are as follows:
[0055] Such as figure 1 As shown, the reflective layer 2 is made on the wafer with the readout circuit 1 as the base, the material used for the reflective layer 2 is metal, and the thickness of the metal film is The reflection rate of reflective layer 2 metal to infrared light of specific wavelength (such as 8 ~ 14um) is more than 99%. After etching the reflective layer 2, an insulating dielectric layer 3 is deposited on the pattern of the reflective layer 2. The insulating dielectric layer 3 can be made of Si 3 N...
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The invention relates to a manufacturing method and structure of an uncooled infrared focal plane detector microbridge. The manufacturing method comprises: preparing a reflective layer on a wafer with a readout circuit as the base; sequentially preparing an insulating medium layer, The first sacrificial layer and the first supporting layer; etching the first supporting layer, preparing the first through hole above the reflective layer; preparing the first electrode, the first dielectric layer, the first passivation layer, and the second electrode in sequence on the first supporting layer Two sacrificial layers, a second support layer, a heat-sensitive layer, and a protective layer; etching the second support layer to prepare a second through hole above the first electrode; etching the protective layer to prepare a contact hole above the heat-sensitive layer; forming a contact hole on the heat-sensitive layer and on the second support layer, sequentially prepare the second electrode, the second dielectric layer, the second passivation layer, the third sacrificial layer, the third support layer, and the third passivation layer; release each sacrificial layer to obtain the detector structure. The invention improves the effective filling factor and infrared absorption efficiency of the pixel structure through the three-layer micro-bridge structure.
Description
technical field [0001] The invention relates to the field of micro-electro-mechanical system process manufacturing in semiconductor technology, in particular to a manufacturing method and structure of an uncooled infrared focal plane detector microbridge. Background technique [0002] Uncooled infrared detection technology is a technology that does not need a refrigeration system to sense the infrared radiation of external objects and convert it into an electrical signal that is processed and output on the display terminal. It can be widely used in many fields such as national defense, aerospace, medicine, and production monitoring. Uncooled infrared focal plane detectors are able to work at room temperature, and have the advantages of light weight, small size, long life, low cost, low power, fast startup and good stability, etc., which meet the needs of civilian infrared systems and some military The urgent need for long-wave infrared detectors in infrared systems has devel...
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IPC IPC(8): G01J5/24
Inventor 王宏臣杨水长
Owner YANTAI RAYTRON TECH