GaAs-based broadband spectrum thyristor laser device with gate electrode

Abstract

The invention discloses a GaAs-based broadband spectrum thyristor laser device with a gate electrode, relating to the technical field of semiconductor photoelectronic devices. According to the GaAs-based broadband spectrum thyristor laser device, by combining a PiN structure of a traditional laser device and a PNPN structure of a traditional thyristor, the GaAs-based novel PNPiN-structured thyristor laser device including a quantum well active region layer, a p-form gate electrode, a GaAs channel junction and the like is provided; an ultrathin heavily-doped n-form layer and an ultrathin heavily-doped n-form layer are introduced into the GaAs channel junction and are combined with the structure of the quantum well active region layer, so that the stability of the device is guaranteed, high power is acquired, and meanwhile, the broadband-spectrum lasing is realized; and meanwhile, by introducing the p-form gate electrode, the controllability of the device is further improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronic devices, in particular to a GaAs-based wide-spectrum thyristor laser. Background technique [0002] With the rapid development of ultra-broad spectrum technology, people pay more and more attention to wide-spectrum light sources, and have extensive research and application at home and abroad. Because broadband light sources have the advantages of wide spectrum, high intensity, and high spatial coherence, they are used in frequency clocks, phase stabilization and control, optical coherent imaging, ultrashort pulse compression, optical communications, broadband lidar, atmospheric science, optical Control, attosecond pulse generation, coherent control, and optical metrology, etc., have a wide range of applications. [0003] However, traditional broadband light sources are represented by high-power solid-state mode-locked lasers. Although they have excellent characteristics such ...

AI Technical Summary

Problems solved by technology

[0007] Although the wide-spectrum laser based on semiconductor technology has solved the problems of large volume and narrow application range of traditional broadband lasers, it is still subject to the following problems: 1) The power of the device is too small, especially the power per unit spectral density is too small. There are great constraints on a variety of applications; 2) The stability of the device is poor and the controllability is low, which has a great impact on its practical application

Images