Highly-pure zinc arsenide preparation device and method

A preparation device, a technology for zinc arsenide, applied in chemical instruments and methods, arsenic compounds, inorganic chemistry, etc., can solve the problems of high process temperature, high energy consumption, long process time, etc., and achieve short time, high efficiency and purity. high effect

Active Publication Date: 2017-02-01
SHANGHAI ZHENGFAN TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The common disadvantage of the above methods is that the reaction and purification are carried out separately, the process time is long, the process temperature is high, the energy consumption is also high, and there are by-products, which affect the Zn 3 As 2 product quality

Method used

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  • Highly-pure zinc arsenide preparation device and method
  • Highly-pure zinc arsenide preparation device and method
  • Highly-pure zinc arsenide preparation device and method

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Embodiment

[0036] Such as figure 2 As shown, a preparation device for high-purity zinc arsenide includes a closed reactor 5, and the closed reactor 5 is provided with a protective gas inlet 1, a raw material charging port 2, an exhaust port 3, a temperature measuring element 6 and electric heater7. A product unloading rack 4 is arranged in the closed reactor 5 . The protective gas inlet 1 , the raw material charging port 2 and the exhaust port 3 are arranged on the top of the closed reactor 5 . The electric heater 7 is arranged at the bottom of the closed reactor 5 . The temperature measuring element 6 is arranged on the outer wall of the closed reactor 5 .

[0037] A method for preparing high-purity zinc arsenide, using the above-mentioned high-purity zinc arsenide preparation device, the specific steps are:

[0038] Raw material metal arsenic and metal zinc are pulverized with a ball ink pulverizer under nitrogen protection environment. Then pass through a sieving machine, sieve ...

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Abstract

The invention provides a highly-pure zinc arsenide preparation device and method. The highly-pure zinc arsenide preparation method is characterized in that the highly-pure zinc arsenide preparation device is adopted, and the method comprises the following steps: crushing and mixing metal arsenic and metal zinc under the protection of nitrogen, and filling a closed reactor with the above obtained mixture from a raw material charging opening; triggering a reaction of the metal arsenic and the metal zinc in the reactor under the protection of nitrogen by heating of an electric heater, stopping heating after the reaction starts, and allowing heat regenerated in the reaction to make the reaction continuously goes on; and naturally cooling the above obtained reaction product under the protection of nitrogen after the reaction ends in order to obtain highly-pure zinc arsenide. Highly-pure nitrogen blowing is continuously adopted in the reaction process to remove impurities in order to obtain the highly-pure zinc arsenide product. Zinc arsenide with a tetragonal crystal structure is obtained through natural cooling after reaction ending, and is used for producing hydrogen arsenide gas as a raw material.

Description

technical field [0001] The invention relates to the technical field of semiconductor material preparation. High-purity zinc arsenide is a raw material for preparing high-purity arsine gas. High-purity arsine is a raw material for the production of integrated circuits, semiconductor lighting, high-efficiency solar cells, and power devices. Background technique [0002] In the prior art, the production of high-purity zinc arsenide mainly has the following methods: [0003] (1) The preparation method disclosed in the invention patent CN201210248955.X "A Method for Producing Zinc Arsenide" is as follows: ① powder the metal arsenic and metal zinc raw materials, mix them, put them into a graphite boat, and then put the graphite boat into Seal and vacuumize the airtight reaction vessel, fill it with inert gas, and carry out the heating synthesis reaction; ②Control the synthesis reaction temperature at 600-800°C, and react to obtain primary zinc arsenide; ③The primary zinc arsenide...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G28/00
CPCC01G28/00C01P2002/72C01P2002/89C01P2006/80
Inventor 李东升
Owner SHANGHAI ZHENGFAN TECH
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