Storage and calculation array structure and operation method thereof

A computing array and array technology, applied in the field of storage and computing array structures and their operations, can solve the problems of inability to logically calculate data, unable to transmit in bit lines, and unable to make full use of the advantages of arrays, so as to achieve flexible storage and computing functions, The effect of improving utilization and improving computing efficiency

Inactive Publication Date: 2017-02-01
HUAZHONG UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This design can only perform logical calculations on the data in the resistive cells connected to the same word line in the array, but cannot perform logical calculations on the data in the resistive cells connected to the same bit line in the array. The advantages of the array; and some functions such as data transmission will also be limited, and can only be transmitted in the word line and cannot be transmitted in the bit line

Method used

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  • Storage and calculation array structure and operation method thereof
  • Storage and calculation array structure and operation method thereof
  • Storage and calculation array structure and operation method thereof

Examples

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Embodiment 2

[0075] The above several results of Example 2 are combined to correspond exactly to image 3 The logical truth table shown in , thereby also verifying that the operation based on the storage and computing array structure provided by the embodiment realizes the IMP logic calculation based on the word line.

[0076] Figure 8 It is a schematic diagram of the operation of IMP logic calculation based on bit lines and a schematic diagram of its equivalent circuit diagram using the above-mentioned array structure in Embodiment 3 of the present invention;

[0077] Wherein, 8 (a) is the schematic diagram of the operation of realizing the IMP logic calculation based on the bit line; when performing the IMP logic calculation based on the bit line, one end of the two word lines respectively connected to M1 and M3 is strobed by the strobe area S2 , one end of the bit line connected to M1 and M3 is gated by the gating area S4, then two memristors M1, M3 and grounding resistor R form an IM...

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Abstract

The invention discloses a storage and calculation array structure and an operation method thereof. The array structure comprises a resistive unit crossing rod array M, first to fourth gate regions S1 to S4, n bit line voltage sources U1n to Unn, m word line voltage sources Um1 to Umm, n bit line grounding resistors R1n to Rnn and m word line grounding resistors Rm1 to Rmm, wherein the resistive unit crossing rod array is separated from the voltage sources and the grounding resistors through the gate regions; when the storage and calculation array structure is used for calculation, the gate regions are used for realizing the gating on the grounding resistors, the voltage sources and the resistive units participating in the calculation; a material implication (IMP) logic circuit is formed. The conventional IMP logic-based resistive array is expanded, so that the IMP calculation can be performed on the resistive unit in a certain row, and can also be performed on the resistive unit in a certain line; the utilization rate on the array is greatly improved; the calculation efficiency is improved, so that the functions of storage, calculation and the like of data in the array can become more flexible.

Description

technical field [0001] The invention belongs to the field of digital circuits, and more specifically relates to a storage and calculation array structure and an operation method thereof. Background technique [0002] Memristor is considered as the fourth basic circuit element besides resistors, capacitors, and inductors. It can memorize the amount of charge flowing through it, and its resistance value can be changed by controlling the change of current. The high-resistance state and low-resistance state of memristor can be used to store "0" and "1" for information storage, and has the advantages of non-volatility, low power consumption, high speed, and high integration. In addition, memristors have been proposed to implement a type of state logic operation called substantial implication logic, where the result of the logic operation is stored directly in the resistive state of the device. That is to say, the calculation and storage of data can be completed in the same devic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/10G11C16/08G11C16/24
CPCG11C16/08G11C16/107G11C16/24
Inventor 李祎程龙缪向水周亚雄王卓睿
Owner HUAZHONG UNIV OF SCI & TECH
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