Unlock instant, AI-driven research and patent intelligence for your innovation.

Ingan/gan nanocolumn multiple quantum wells grown on strontium aluminate tantalum lanthanum substrate and preparation method thereof

A technology of strontium tantalum lanthanum aluminate and multiple quantum wells, which is applied to semiconductor devices, electrical components, circuits, etc., can solve problems such as unstable chemical properties, achieve the effects of easy acquisition, increase growth rate and productivity, and reduce production costs

Active Publication Date: 2019-05-14
SOUTH CHINA UNIV OF TECH
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But La 0.3 Sr 1.7 AlTaO 6 The chemical properties of the substrate are unstable at high temperature, so it is necessary to make La 0.3 Sr 1.7 AlTaO 6 On-substrate nanopillar LEDs can truly achieve large-scale applications, and there is an urgent need to find La 0.3 Sr 1.7 AlTaO 6 A new method and process for growing nanopillar LEDs on substrates

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Ingan/gan nanocolumn multiple quantum wells grown on strontium aluminate tantalum lanthanum substrate and preparation method thereof
  • Ingan/gan nanocolumn multiple quantum wells grown on strontium aluminate tantalum lanthanum substrate and preparation method thereof
  • Ingan/gan nanocolumn multiple quantum wells grown on strontium aluminate tantalum lanthanum substrate and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] The preparation method of the InGaN / GaN nanocolumn multiple quantum well grown on the strontium tantalum lanthanum aluminate substrate of this embodiment comprises the following steps:

[0042] (1) Selection of the substrate and its crystal orientation: using La 0.3 Sr 1.7 AlTaO 6 The substrate, with the (111) plane offset from the (100) direction by 0.5-1° as the epitaxial plane, the crystal epitaxial orientation relationship is: the (0001) plane of GaN is parallel to the La 0.3 Sr 1.7 AlTaO 6 (111) side;

[0043] (2) Substrate surface polishing, cleaning and annealing treatment, the specific process of the annealing is: put the substrate into the annealing chamber, and treat La 0.3 Sr 1.7 AlTaO 6 The substrate was annealed for 3 hours and then air-cooled to room temperature;

[0044] The surface polishing of the substrate is specifically: firstly La 0.3 Sr 1.7 AlTaO 6 The surface of the substrate is polished with diamond slurry, and the surface of the subst...

Embodiment 2

[0055] The preparation method of the nanocolumn LED grown on the strontium tantalum lanthanum aluminate substrate of this embodiment comprises the following steps:

[0056] (1) Selection of the substrate and its crystal orientation: using La 0.3 Sr 1.7 AlTaO 6 The substrate, with the (111) plane offset from the (100) direction by 0.5-1° as the epitaxial plane, the crystal epitaxial orientation relationship is: the (0001) plane of GaN is parallel to the La 0.3 Sr 1.7 AlTaO 6 (111) side;

[0057] (2) Substrate surface polishing, cleaning and annealing treatment, the specific process of the annealing is: put the substrate into the annealing chamber, and treat La 0.3 Sr 1.7 AlTaO 6 The substrate was annealed for 5 hours and then air-cooled to room temperature;

[0058]The surface polishing of the substrate is specifically:

[0059] La 0.3 Sr 1.7 AlTaO 6 The surface of the substrate is polished with diamond slurry, and the surface of the substrate is observed with an op...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
heightaaaaaaaaaa
diameteraaaaaaaaaa
Login to View More

Abstract

The invention belongs to the technical field of multiple quantum wells of nanometer arrays, and discloses an InGaN / GaN nano-pillar multiple quantum well grown on a strontium tantalum lanthanum aluminate substrate and a preparation method thereof. The InGaN / GaN nano-pillar multiple quantum well grown on a strontium tantalum lanthanum aluminate substrate comprises an AlN nucleation layer grown on a La<0.3> Sr<1.7>AlTaO<6> substrate, a GaN nano-pillar template grown on the AlN nucleation layer, an AlN / GaN super lattice layer grown on the nano-pillar template, and an InGaN / GaN nano-pillar multiple quantum well grown on the AlN / GaN super lattice layer. A nano-pillar array prepared is size-controllable and of uniform orientation. The obtained multiple quantum well has low defect density and excellent electrical and optical properties.

Description

technical field [0001] The invention relates to the field of multiple quantum wells and growth of nano-arrays, in particular to the field of growth on strontium aluminate tantalum lanthanum (La 0.3 Sr 1.7 AlTaO 6 ) nanocolumn multiple quantum wells on a substrate and a preparation method thereof. Background technique [0002] GaN and its related group III nitrides have excellent electrical, optical, and acoustic properties, and have been widely used in the preparation of light-emitting diodes (LEDs), laser diodes (LDs), and field-effect transistors. In recent years, GaN-based nanopillar LEDs have attracted much attention as a potential LED structure. Compared with planar LEDs, nanopillar LEDs have a high surface-to-volume ratio (area / volume), which can significantly reduce wear and tear. Dislocation density; secondly, nano-column LEDs can greatly improve the light-emitting efficiency of LEDs and realize light coupling and output; finally, by controlling the size of nano-c...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/02H01L33/06H01L33/12H01L33/00
CPCH01L33/007H01L33/02H01L33/06H01L33/12
Inventor 李国强杨美娟林云昊李媛
Owner SOUTH CHINA UNIV OF TECH