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Nonpolar ingan/gan multi-quantum well nanocolumn and its preparation method

A multi-quantum well, non-polar technology, applied in the direction of nanotechnology, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problems of LED light-emitting wavelength instability, reduced carrier radiation recombination efficiency, LED bending, etc., to achieve Reduce the QCSE effect, improve the radiation recombination efficiency, and reduce the effect of thermal stress

Active Publication Date: 2019-01-29
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the quantum confinement Stark effect (QCSE) of GaN on the polar plane will cause the energy band of the LED to bend and tilt, thereby causing the separation of electrons and holes, seriously reducing the radiative recombination efficiency of carriers, and causing LED Luminous wavelength is unstable

Method used

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  • Nonpolar ingan/gan multi-quantum well nanocolumn and its preparation method
  • Nonpolar ingan/gan multi-quantum well nanocolumn and its preparation method
  • Nonpolar ingan/gan multi-quantum well nanocolumn and its preparation method

Examples

Experimental program
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Effect test

Embodiment 1

[0048] This example was grown on LiGaO 2 The preparation method of the nonpolar InGaN / GaN multi-quantum well nanocolumn on the substrate comprises the following steps:

[0049] (1) Using LiGaO 2 For the substrate, select the crystal orientation as the epitaxial plane with the (100) plane offset by 0.5° to the (110) direction;

[0050] (2) Carry out surface polishing, cleaning and annealing treatment to substrate, the concrete process of described substrate surface polishing is: first LiGaO 2 The surface of the substrate is polished with diamond slurry, and the surface of the substrate is observed with an optical microscope until there are no scratches, and then the method of chemical mechanical polishing is used for polishing; the specific process of cleaning is: the LiGaO 2 The substrate was ultrasonically cleaned in deionized water for 3 minutes at room temperature to remove LiGaO 2 Contamination particles on the surface of the substrate are washed with hydrochloric acid,...

Embodiment 2

[0063] This example was grown on LiGaO 2 The preparation method of the nonpolar InGaN / GaN multi-quantum well nanocolumn on the substrate comprises the following steps:

[0064] (1) Using LiGaO 2 For the substrate, select the epitaxial plane with the crystal orientation as the (100) plane offset by 1.0° to the (110) direction;

[0065] (2) Carry out surface polishing, cleaning and annealing treatment to substrate, the concrete process of described substrate surface polishing is: first LiGaO 2 The surface of the substrate is polished with diamond slurry, and the surface of the substrate is observed with an optical microscope until there are no scratches, and then the method of chemical mechanical polishing is used for polishing; the specific process of cleaning is: the LiGaO 2 The substrate was ultrasonically cleaned in deionized water for 5 minutes at room temperature to remove LiGaO 2 Contamination particles on the surface of the substrate are washed with hydrochloric acid,...

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Abstract

The invention belongs to the technical field of LED materials, and discloses a non-polar InGaN / GaN multi-quantum-well nano-pillar and a preparation method thereof. The non-polar InGaN / GaN multi-quantum-well nano-pillar comprises a LiGaO2 substrate, a non-polar GaN nano-pillar template layer grown on the LiGaO2 substrate, and non-polar InGaN / GaN multi-quantum-well nano-pillars grown on a nano-pillar array in the non-polar GaN nano-pillar template layer. The non-polar GaN nano-pillar template layer includes a non-polar GaN buffer layer and a non-polar GaN nano-pillar array. The non-polar InGaN / GaN multi-quantum-well nano-pillar grown on the LiGaO2 substrate can improve the photoelectric properties of materials, improve the radiative recombination efficiency of carriers and greatly improve the luminous efficiency of nitride devices.

Description

technical field [0001] The present invention relates to non-polar InGaN / GaN multi-quantum well nanocolumns, in particular to those grown on LiGaO 2 Nonpolar InGaN / GaN multi-quantum well nanocolumn on substrate and its preparation method. Background technique [0002] Semiconductor light-emitting diode (LED) is a new generation of light source products with high efficiency, energy saving and environmental protection. As an emerging industry with great development prospects, in recent years, the LED industry has rapidly become the new focus of international scientific and technological competition, and has also become the focus of the development of my country's strategic emerging industries. Due to its unique physical and chemical properties, GaN and its related group III nitrides have become the most ideal materials for manufacturing high-efficiency blue and white LED devices. At present, GaN-based LEDs mainly use heterogeneous substrates for epitaxy, and there are problem...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/02H01L33/06H01L33/12H01L33/32H01L21/02H01L33/00B82Y40/00
CPCB82Y40/00H01L21/02414H01L21/02433H01L21/02458H01L21/0254H01L21/0262H01L33/007H01L33/025H01L33/06H01L33/12H01L33/32
Inventor 李国强王海燕杨为家
Owner SOUTH CHINA UNIV OF TECH