A kind of non-polar gan nanocolumn growing on ligao2 substrate and preparation method thereof
A non-polar, nano-column technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of reducing carrier radiation recombination efficiency, LED light-emitting wavelength instability, LED bending, etc., to improve radiation recombination efficiency, Reduce the effect of QCSE and reduce thermal stress
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Embodiment 1
[0034] This example was grown on LiGaO 2 The preparation method of the nonpolar GaN nanocolumn on the substrate, comprises the following steps:
[0035] (1) Using LiGaO 2 As the substrate, the crystal orientation is selected as the (100) plane and the (110) direction is 0.5° as the epitaxial plane;
[0036] (2) Surface polishing, cleaning and annealing are carried out on the substrate. The specific process of surface polishing of the substrate is as follows: firstly, the LiGaO 2 The surface of the substrate is polished with diamond slurry, and the surface of the substrate is observed with an optical microscope until there are no scratches, and then the method of chemical mechanical polishing is used for polishing; the specific process of cleaning is: the LiGaO 2 The substrate was ultrasonically cleaned in deionized water for 3 minutes at room temperature to remove LiGaO 2 The dirt particles on the surface of the substrate are washed with hydrochloric acid, acetone, and etha...
Embodiment 2
[0047] This example was grown on LiGaO 2 The preparation method of the nonpolar GaN nanocolumn on the substrate, comprises the following steps:
[0048] (1) Using LiGaO 2 As the substrate, the crystal orientation is selected as the (100) plane and the (110) direction is 1.0° as the epitaxial plane;
[0049] (2) Surface polishing, cleaning and annealing are carried out on the substrate. The specific process of surface polishing of the substrate is as follows: firstly, the LiGaO 2 The surface of the substrate is polished with diamond slurry, and the surface of the substrate is observed with an optical microscope until there are no scratches, and then the method of chemical mechanical polishing is used for polishing; the specific process of cleaning is: the LiGaO 2 The substrate was ultrasonically cleaned in deionized water for 5 minutes at room temperature to remove LiGaO 2 The dirt particles on the surface of the substrate are washed with hydrochloric acid, acetone, and etha...
Embodiment 3
[0058] This example was grown on LiGaO 2 The preparation method of the nonpolar GaN nanocolumn on the substrate, comprises the following steps:
[0059] (1) Using LiGaO 2 As the substrate, the crystal orientation is selected as the (100) plane and the (110) direction is 0.75° as the epitaxial plane;
[0060] (2) Surface polishing, cleaning and annealing are carried out on the substrate. The specific process of surface polishing of the substrate is as follows: firstly, the LiGaO 2 The surface of the substrate is polished with diamond slurry, and the surface of the substrate is observed with an optical microscope until there are no scratches, and then the method of chemical mechanical polishing is used for polishing; the specific process of cleaning is: the LiGaO 2 The substrate was ultrasonically cleaned in deionized water for 4 minutes at room temperature to remove LiGaO 2 The dirt particles on the surface of the substrate are washed with hydrochloric acid, acetone, and eth...
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