Green-light LED (Light Emitting Diode) epitaxial layer structure and growing method

Abstract

The invention discloses a green-light LED (Light Emitting Diode) epitaxial layer structure and a growing method. The green-light LED epitaxial layer structure comprises a substrate which is made of sapphire, silicon, silicon carbide, gallium nitride or gallium arsenide, a gallium nitride buffer layer which grows on the substrate, a non-doping gallium nitride layer which grows on the gallium nitride buffer layer, an N type gallium nitride buffer layer which grows on the non-doping gallium nitride layer, a multi-quantum-well area which grows on the N type gallium nitride layer, a P type aluminum gallium nitride layer which grows on the multi-quantum-well area, a P type gallium nitride layer which grows on the P type aluminum gallium nitride layer and a P type gallium nitride layer which grows on the P type gallium nitride layer. The green-light LED epitaxial layer structure achieves improvement of the LED luminous efficiency by improving the hole injection efficiency in a MQW (Multiple Quantum Well) and reducing the QCSE effect in an indium gallium nitride quantum well.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a green LED epitaxial layer structure and a growth method, which can be used in the manufacture of semiconductor optoelectronic devices. Background technique [0002] GaN-based green light-emitting diode (LED) is a semiconductor solid-state light-emitting device widely used in the field of display and lighting. The core part of its epitaxial structure is the InGaN / GaN multiple quantum well (MQW) layer. The luminous efficiency of LED mainly depends on the structure and quality of the MQW layer, and optimizing the MQW structure and improving the quality of the MQW material is the fundamental way to obtain high-brightness green LED devices. [0003] In traditional GaN-based green LEDs, the simple structure of the InGaN / GaN MQW layer is used as the active region, which is characterized by the use of GaN material as the barrier layer to confine carriers. The struct...

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Problems solved by technology

Although reducing the barrier height (such as using a single InGaN barrier) can effectively improve the hole injection efficiency and suppress the QCSE effect, but because the blocking effect of the potential barrier on electrons is reduced at the same time, the leakage of electrons is increased and the electron leakage is reduced. The injection efficiency will also lead to the weakening of LED luminous intensity

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