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A silicon chip grafted with polyionic liquid and its preparation method and application

A technology of polyionic liquids and silicon wafers, applied in chemical instruments and methods, material separation, and other chemical processes, can solve problems such as poor results, and achieve the effects of short operation time, strong adsorption capacity, and reduced dosage

Active Publication Date: 2019-04-26
SHENZHEN NTEK TESTING TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the synthesis of supported polyionic liquids from a single imidazole ionic liquid is often ineffective in the modification of solids

Method used

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  • A silicon chip grafted with polyionic liquid and its preparation method and application
  • A silicon chip grafted with polyionic liquid and its preparation method and application
  • A silicon chip grafted with polyionic liquid and its preparation method and application

Examples

Experimental program
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Effect test

specific Embodiment 1

[0035] The preparation method of the silicon wafer grafted with polyionic liquid disclosed in this embodiment is characterized in that it comprises the following steps:

[0036] 1) The specific process of silicon wafer surface modification treatment is as follows:

[0037]1-1) Cleaning the silicon wafer: Put the cut silicon wafer into the ethanol solution for 5 minutes, rinse it with deionized water, and then use the concentrated sulfuric acid:hydrogen peroxide solution with a volume ratio of 7:3 for 10 minutes before using it. Rinse with deionized water, then sonicate with deionized water for 10 minutes, and finally use 5% hydrofluoric acid solution for 10 minutes, then rinse with deionized water, then use deionized water for 5 minutes, and put them in ethanol solution for storage.

[0038] 1-2) Hydroxylation treatment: place the silicon wafer described in step 1-1) in 0.1mol·L -1 Soak in sodium hydroxide solution (0.2g sodium hydroxide, 50ml deionized water) for 8 minutes, ...

specific Embodiment 2

[0045] The preparation method of the silicon wafer grafted with polyionic liquid disclosed in this embodiment is characterized in that it comprises the following steps:

[0046] 1) The specific process of silicon wafer surface modification treatment is as follows:

[0047] 1-1) Cleaning the silicon wafer: Put the cut silicon wafer into the ethanol solution for 5 minutes, rinse it with deionized water, and then use the concentrated sulfuric acid:hydrogen peroxide solution with a volume ratio of 7:3 for 10 minutes before using it. Rinse with deionized water, then sonicate with deionized water for 10 minutes, and finally use 5% hydrofluoric acid solution for 10 minutes, then rinse with deionized water, then use deionized water for 5 minutes, and put them in ethanol solution for storage.

[0048] 1-2) Hydroxylation treatment: place the silicon wafer described in step 1-1) in 0.1mol·L -1 Soak in sodium hydroxide solution (0.2g sodium hydroxide, 50ml deionized water) for 9min, rins...

specific Embodiment 3

[0054] The preparation method of the silicon wafer grafted with polyionic liquid disclosed in this embodiment is characterized in that it comprises the following steps:

[0055] 1) The specific process of silicon wafer surface modification treatment is as follows:

[0056] 1-1) Cleaning the silicon wafer: Put the cut silicon wafer into the ethanol solution for 5 minutes, rinse it with deionized water, and then use the concentrated sulfuric acid:hydrogen peroxide solution with a volume ratio of 7:3 for 10 minutes before using it. Rinse with deionized water, then sonicate with deionized water for 10 minutes, and finally use 5% hydrofluoric acid solution for 10 minutes, then rinse with deionized water, then use deionized water for 5 minutes, and put them in ethanol solution for storage.

[0057] 1-2) Hydroxylation treatment: place the silicon wafer described in step 1-1) in 0.1mol·L -1 Soak in sodium hydroxide solution (0.2g sodium hydroxide, 50ml deionized water) for 10min, rin...

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Abstract

The invention discloses a silicon wafer grafted with a polyionic liquid, a preparation method and application thereof. The silicon wafer grafted with the polyionic liquid is formed by that 1-vinyl-3-phenylpropyl imidazole chloride salt and 1,1-(1, 6-hexane) bis (1-vinyl imidazole) bromide salt as two kinds of the polyionic liquid are used as monomers and grafted on the modified silicon wafer surface by atom transfer radical polymerization (ATRP) reaction, three curcumin substances including mono-demethoxy curcumin, bis-demethoxy curcumin and curcumin can be obtained by solid phase extraction. By use of the synthesized silicon wafer loaded with the polyionic liquid, the stability of extraction process can be improved, the extraction adsorption amount can be enhanced, the curcumin can be accurately detected through high performance liquid chromatography, and the reproducibility is good.

Description

technical field [0001] The invention belongs to the technical field of solid phase extraction, and is specifically obtained by synthesizing a new solid phase extraction agent and enriching monodemethoxycurcumin, bisdemethoxycurcumin and curcumin with the solid phase extraction agent Method for detection of curcumin. Background technique [0002] Curcumin (C 21 h 2 o 6 ) is a chemical component extracted from some plant rhizomes of Zingiberaceae and Araceae. Diseases, cancer and other diseases also have a certain therapeutic effect. The enrichment and detection of curcumin is of great significance for clinical diagnosis. However, the existing curcumin detection methods have poor reproducibility and many interferences, so they cannot detect curcumin accurately and effectively. [0003] In recent years, room temperature ionic liquids, especially imidazole ionic liquids, have played an important role in the field of chemistry. Room temperature ionic liquid is a molten salt...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B01J20/26B01J20/28B01J20/30G01N30/08
CPCB01J20/02B01J20/26B01J20/28033G01N30/08G01N2030/027
Inventor 周业华
Owner SHENZHEN NTEK TESTING TECH
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