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Preparation method for metal ruthenium powder for target material

A technology of metal ruthenium and metal, which is applied in the field of preparation of metal ruthenium powder for target materials, can solve the problems of difficult removal of impurity elements, high cost, complicated process of purifying ruthenium powder, etc., and achieves low cost, simple process and high operability Effect

Inactive Publication Date: 2017-02-15
GRIKIN ADVANCED MATERIALS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The process of purifying ruthenium powder by this method is complicated, the cost is high, and impurity elements such as Na, K, Fe, Ni are not easy to remove

Method used

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  • Preparation method for metal ruthenium powder for target material
  • Preparation method for metal ruthenium powder for target material
  • Preparation method for metal ruthenium powder for target material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] Put metal ruthenium powder in the tantalum container, vacuum 10 -2 Pa, under the condition of holding temperature of 1100 ℃, vacuum sublimation for 12 hours. After the sublimation process is over, the ruthenium powder is removed. The content of impurity elements was analyzed by a glow discharge mass spectrometer, and the specific analysis results are shown in Table 2.

Embodiment 2

[0023] Put metal ruthenium powder in the tantalum container, vacuum 10 -3 Pa, under the condition of holding temperature of 1300°C, vacuum sublimation for 16 hours. After the sublimation process is over, the ruthenium powder is removed. The content of impurity elements was analyzed by a glow discharge mass spectrometer, and the specific analysis results are shown in Table 2.

Embodiment 3

[0025] Put metal ruthenium powder in the tantalum container, vacuum 10 -4 Pa, under the condition of holding temperature of 1600 ℃, vacuum sublimation for 24 hours. After the sublimation process is over, the ruthenium powder is removed. The content of impurity elements was analyzed by a glow discharge mass spectrometer, and the specific analysis results are shown in Table 2.

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Abstract

The invention discloses a preparation method for metal ruthenium powder for a target material, and belongs to the field of noble metal powder production. Boiling point-steam pressure difference as well as concentration gradient of metal ruthenium and impurity elements is utilized, and a vacuum sublimation method is adopted to purify commercially available metal ruthenium powder with purity being 99.9%, so that impurity elements, which are easily volatilized, partly sublimate or evaporate to deeply remove Ca, Cr, Co, Cu, Cd, Cl, Fe, K, Li, Mg, Mn, Na and Ni; according to the prepared metal ruthenium powder, purity can be 99.995% or higher, content of gas element C is not greater than 60 ppm, and content of O is not greater than 50 ppm, so that the prepared metal ruthenium powder can meet preparation use of the target material. Moreover, the preparation method is simple, is low in cost, is high in maneuverability, is green and environmentally-friendly.

Description

technical field [0001] The invention belongs to the field of noble metal powder production, and in particular relates to a method for preparing metal ruthenium powder for target materials. Background technique [0002] Metal ruthenium is widely used in industries such as catalysts, alloys, electroplating, and electronics, and its commonly used purity does not exceed 99.95%. With the development of science and technology, ruthenium, as an intermediate layer material of magnetic recording media, is widely used in computer hard disks and semiconductor storage integrated circuits. The purity of the ruthenium target used for the above-mentioned sputtering requires more than 99.99%. [0003] A lot of research has been done on the preparation methods of high-purity ruthenium powder at home and abroad, which can usually be divided into chemical methods and physical methods. [0004] Document 1 (Han Gang, Ueno Yudian. Development of high-purity sputtering targets [J]. Hitachi Metals...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B22F1/00C23C14/34
CPCC23C14/3407B22F1/145
Inventor 王庄丁照崇滕海涛王越于海洋贺昕李勇军熊晓东
Owner GRIKIN ADVANCED MATERIALS