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A Realization Method of All-Photodiode

A technology of all-optical diode and realization method, which is applied in the realization field of all-optical diode, can solve the problem of high requirements on the preparation process, and achieve the effect of great application value

Inactive Publication Date: 2018-12-04
NANCHANG HANGKONG UNIVERSITY
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there are still the following disadvantages: the structure adopts the asymmetric structure design of the photonic crystal waveguide FP cavity and the nonlinear microcavity beside the waveguide. In the photonic crystal waveguide structure, the FP cavity and the microcavity structure must be realized at the same time. relatively high

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Embodiment

[0017] Embodiment: a preferred implementation case of the present invention is introduced below:

[0018] figure 1 It is a schematic diagram of the structure of an all-optical diode based on a photonic crystal waveguide. The microcavity (Fano) 07 below the line defect waveguide structure introduces an elliptical dielectric column to replace the original circular dielectric column structure, and adds a reflective layer dielectric column 06 in the photonic crystal waveguide near the high-Q nonlinear microcavity, In addition, the resonance peak corresponding to the Fano microcavity 07 is changed from a reflection type to a transmission type, forming a transmission type Fano resonance cavity. And the position of this reflective layer deviates slightly to the left from a lattice position directly above the microcavity, thus breaking the mirror symmetry of the Fano cavity, enabling the asymmetric coupling between the Fano microcavity 07 and the two sides of the photonic crystal wa...

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Abstract

The invention discloses a method for realizing an all-optical diode. In a two-dimensional photonic crystal waveguide, a microcavity is designed on the side; a dielectric column cell is added in the photonic crystal waveguide near the microcavity as a reflection layer, and the reflection The position of the layer deviates from the position of the waveguide facing the microcavity by a lattice constant. When the incident light intensity increases all the time, the light incident in the forward direction first reaches the power threshold for exciting the nonlinear Kerr effect of the microcavity material, while the incident light in the reverse direction reaches the power threshold Under this light intensity, it is still in a cut-off state, thereby realizing the functions of forward conduction and reverse cut-off of the all-photodiode function. The invention adjusts the working band by adjusting the lattice constant, which is convenient to be integrated in the all-optical network, and thus has great application value. It has a response time on the order of picoseconds, and the photonic crystal has the characteristics of adjusting the forbidden band range according to its own lattice constant.

Description

technical field [0001] The invention relates to a method for realizing an all-optical diode by using a nonlinear photonic crystal, in particular to a method for realizing an all-optical diode by using an asymmetric coupling structure of a two-dimensional photonic crystal waveguide and a microcavity. Background technique [0002] Today, with the increasing amount of information, the traditional information network can no longer meet people's needs. The emergence of new material photonic crystals has become inevitable. more space [0003] As one of the key components of all-optical signal processing in the future, the all-optical diode must continuously study its implementation method, improve and perfect it to make it more convenient and efficient to realize the functions of forward conduction and reverse cut-off. The dual-cavity all-optical diode designed in the present invention does not need external energy to stimulate pumping, and it is completely all-optical control be...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02F1/365G02B6/122
CPCG02B6/1225G02F1/365
Inventor 刘彬胡金凤梁红勤刘云凤
Owner NANCHANG HANGKONG UNIVERSITY
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