Memory cell, semiconductor structure, semiconductor device and manufacturing method

Abstract

A magnetic cell includes a magnetic region formed from a precursor magnetic material including a diffused species and at least one other species. an amorphous region proximate to the magnetic region and formed of a precursor trapping material comprising at least one attractor species having at least one trapping site and a chemical affinity for the diffusing species . The diffusing species is transferred from the precursor magnetic material to the precursor trapping material, wherein the diffusing species is bonded to the at least one attractor species at the trapping sites. The species of the enriched trapping material may be intermixed such that the enriched trapping material becomes or remains amorphous. The depleted magnetic material can then be crystallized by propagation from adjacent crystalline material without interference from the amorphous enriched trapping material. This achieves high tunnel magnetoresistance and high magnetic anisotropy strength. The invention also discloses a manufacturing method and a semiconductor device.

Description

[0001] priority claim [0002] This application claims that the serial number of the application titled "MEMORY CELLS, SEMICONDUCTOR STRUCTURES, SEMICONDUCTOR DEVICES, AND METHODS OF FABRICATION" filed on April 9, 2014 is 14 / 249,183 Interest in the filing date of the U.S. patent application. technical field [0003] In various embodiments, the present invention relates generally to the field of memory device design and fabrication. More particularly, the present invention relates to the design and fabrication of memory cells characterized as spin torque transfer magnetic random access memory (STT-MRAM) cells, to the semiconductor structures employed in such memory cells, and to the incorporation of Semiconductor devices of such memory cells. Background technique [0004] Magnetic Random Access Memory (MRAM) is a non-volatile computer memory technology based on magnetoresistance. One type of MRAM cell is a spin torque transfer MRAM (STT-MRAM) cell that includes a magnetic...

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Problems solved by technology

However, propagating the crystal structure can be inhibited or can lead to microstructural defects in the target magnetic material: in the case where the seed material has defects in its crystal structure, in the case where the target magnetic material has a Structurally antagonized crystal structures, or in the case where an antagonistic crystal structure also propagates from materials other than the seed material to the target magnetic material

Therefore, forming a magnetic material with a desired microstructure (e.g., achieving high TMR) without degrading other properties of the magnetic material or the resulting structure (e.g., MA strength) can present challenges

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