A Method for Adding and Processing Small-sized Redundant Graphics of Metal Line Layer

Abstract

The invention discloses an addition and processing method of small-size redundant graphs for metal wire layers. The method comprises the steps of dividing the original layout into a plurality of regions according to a design rule, calculating the graph density of the metal wire layers in the regions, dividing all the regions of the original layout into a first graph density region, a second graph density region and a third graph density region according to the graph density, selecting metal wires meeting addition conditions of the small-size redundant graphs from the regions, adding the small-size redundant graphs for the selected different metal wires located in the first graph density region, the second graph density region and the third graph density region according to the graph size and the quantity, merging the small-size redundant graphs to the original main graph of the metal wire layers in the original layout, and performing optical proximity correction. The method can really realize a change from isolated metal wires to dense metal wires and can achieve purposes of increasing a photolithographic technology window of the selected partial metal wires and improving the selected partial graph density.

Description

technical field [0001] The present invention relates to an OPC (Optical Proximity Effect Correction) method in layout design, and more particularly, relates to a method for adding and processing small-sized redundant graphics on a metal line layer. Background technique [0002] When performing layout design, two methods are usually applied to OPC (Optical Proximity Correction) and DFM (Design for Manufacturability). [0003] The methods commonly used in OPC to improve the lithography process window of the metal line layer include: [0004] 1) Add different compensation values ​​to the graphics of different metal line layers; [0005] 2) Add sub-resolution auxiliary graphics to the small-size graphics of the metal line layer. [0006] Among them, when applying the above method 1), for small and relatively isolated metal lines, if the requirements of the photolithography process window are met, a relatively large compensation value needs to be added, but too much compensatio...

AI Technical Summary

Problems solved by technology

However, the design of the main pattern of many metal line layers is relatively sparse. Since the large-size redundant pattern needs to be kept at a relatively long distance from the main pattern, the distance between the main patterns does not reach the situation when the large-size redundant pattern can be added. The improvement of graphic density by redundant graphics becomes very limited

However, for the case where the design of many metal line layer main patterns is relatively dense, the improvement of pattern density by large-scale redundant patterns will also become very limited.

[0008] Therefore, the commonly used methods of OPC and DFM have their own limitations

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