Transistor and system modeling methods based on artificial neural network

Abstract

The present invention discloses a transistor modeling method based on an artificial neural network. The method comprises: constructing a corresponding artificial neural network topological structure for a current source, a charge source and a non-linear element separately; according to the artificial neural network topological structure and a value of an internal parameter, training the current source, the charge source and the non-linear element separately by using an artificial neural network technology; and importing the well-trained current source, charge source and non-linear element into circuit simulation software, adding an external parasitic inductor, capacitor and resistor, and carrying out encapsulation to form a large signal model of a transistor. The method can be adapted to transistor devices under various processes, and by introducing a channel temperature variable and an ambient temperature variable into an input layer of the artificial neural network topological structure during construction of the current source, the charge source and the non-linear element, memory effects of the transistor, such as self-heating, can be effectively modeled. The present invention further discloses a system modeling method based on an artificial neural network.

Description

technical field [0001] The invention relates to transistor and system modeling in semiconductor circuit design, in particular to a transistor and system modeling method based on artificial neural network. Background technique [0002] High-quality transistor and system models are crucial for computer-aided design (CAD)-based nonlinear microwave-RF circuits, monolithic microwave integrated circuits (MMICs), power amplifiers (PAs), and nonlinear RF systems. With the continuous and rapid development of semiconductor technology and its applications, the power and operating frequency of devices continue to increase, and the transmission of more complex communication signals (such as high standing wave ratio signals of modern communications), the development of high-precision radio frequency devices and system models In order to facilitate the design of semiconductor circuits, it is urgent. [0003] In semiconductor circuit design, empirical models of transistors were first devel...

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Problems solved by technology

However, the increase in the complexity of the formula does not necessarily guarantee accurate fitting of pulsed drain current and gate charge sources, and it is still not flexible enough for different processes and materials

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