A kind of manufacturing method of mim capacitor structure

Abstract

The invention provides a manufacturing method for an MIM (metal-insulator-metal) capacitor structure. According to the MIM capacitor structure manufactured by the method, a groove is formed in the back surface of a substrate, and a capacitor is formed in the groove, so that the thickness of the whole structure can be reduced; moreover, an electrically and thermally conductive layer with a broken edge is adopted for electrical connection and radiation, so that the radiation efficiency of the package structure is ensured.

Description

technical field [0001] The invention relates to the technical field of integrated circuits, in particular to a method for manufacturing a MIM capacitor structure. Background technique [0002] Capacitors, resistors and other passive components (Passive Circuit Element) are widely used in integrated circuit manufacturing technology. into, such as polysilicon-dielectric film-polysilicon (PIP, Poly-Insulator-Poly) capacitors. Because these devices are relatively close to the silicon substrate, the parasitic capacitance between the device and the substrate affects the performance of the device, especially in radio frequency (RF) CMOS circuits, as the frequency increases, the performance of the device decreases rapidly. [0003] The development of metal-insulator-metal (MIM, Metal-Insulator-Metal) capacitor technology provides an effective way to solve this problem. This technology makes capacitors in the interconnection layer, that is, the back-end process (BEOL, Back End OfLin...

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Problems solved by technology

[0006] 1. There is no functional device under the MIM capacitor, so that the mutual interference between the MIM capacitor and the functional device can be completely avoided, but this implementation method will greatly waste the wafer area;

[0007] 2. Place some less sensitive functional devices under the MIM capacitor, which can save a part of the wafer area, but this implementation will still cause mutual interference between the MIM capacitor and the functional devices below it (only this interference is for the functions below it) The device can still be tolerated), and also limits the types of functional devices that can be placed under the MIM capacitor (that is, only some less sensitive functional devices)

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