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Cyanide-based electrolytic gold plating bath and bump forming method using the same

A technology of bumps and cyanide gold salt, applied in the field of cyanide electrolytic gold plating bath, can solve the problems of unsuitability for bonding of printed wiring substrates and low film hardness, and achieve the effects of easy management, reduced production cost and low cost

Active Publication Date: 2019-01-29
EEJA LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Film hardness is too low for conventional gold bumps with film hardness below 60HV
Therefore, it is not suitable for bonding to a printed wiring board provided with a circuit with a narrow pitch width.

Method used

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  • Cyanide-based electrolytic gold plating bath and bump forming method using the same
  • Cyanide-based electrolytic gold plating bath and bump forming method using the same
  • Cyanide-based electrolytic gold plating bath and bump forming method using the same

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Embodiment

[0063] Hereinafter, the present invention will be specifically described by way of examples. The present invention is not limited to these Examples.

[0064] As the object to be plated, the cross-sectional composition of the blank used is Au / TiW / SiO 2 of silicon wafers. A negative photoresist (product name: THB-121N of JSR Corporation) was used for the photoresist film of the silicon wafer. On the photoresist film, two patterned openings were provided with an arrangement pitch of 20 μm. The opening shape of one opening was a rectangle with a short side of 20 μm and a long side of 100 μm. The opening shape of the other opening was a square with a side length of 100 μm.

[0065] According to the compositions described in Table 1-2, the electroplating solutions of Examples 1-12 and Comparative Examples 1-5 were prepared. Immerse the object to be plated in the prepared electroplating solution 1L, and perform electrolytic plating under the conditions described in Table 1-2 unt...

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Abstract

According to the present invention, a cyanide-based electrolytic gold plating bath is provided, which contains: gold cyanide salt as a gold source, 0.1-15 g / L in terms of gold concentration; oxalate, 2.5-50 g / L in terms of oxalic acid; inorganic acid Conductive salt 5-100g / L; water-soluble polysaccharides 0.1-50g / L; and crystallization regulator, based on metal concentration, 0.1-100mg / L, which can form gold bumps with a film hardness of 70-120HV after heat treatment .

Description

technical field [0001] The invention relates to a cyanide electrolytic gold plating bath. Also, it relates to a bump forming method for forming gold bumps with a predetermined hardness on a patterned semiconductor wafer using the cyanide-based electrolytic gold plating bath. Background technique [0002] As a method of mounting a semiconductor wafer on a printed wiring board, there is an electrode bonding method. The electrode bonding method is a method of connecting gold bumps formed on an integrated circuit of a semiconductor wafer to substrate electrodes formed on a printed wiring board. figure 2 It is a cross-sectional view showing an example of the structure of a printed wiring board on which a semiconductor chip is mounted by an electrode bonding method. [0003] figure 2 Among them, 10 is a printed wiring board, and 16 is a semiconductor chip. In the printed wiring board 10 , a board wiring pattern 12 and a board electrode 14 are laminated on the surface of a hard...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C25D3/48C25D5/50H01L21/60
CPCC25D3/48C25D5/50H01L2224/11H01L2224/16225H01L2224/32225H01L2224/73204H01L2924/00C25D7/123H01L24/13
Inventor 古川诚人
Owner EEJA LTD