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Method and system for cleaning photomask

A technology of photomask and chemical solution, which is applied in the field of cleaning photomasks, and can solve problems such as incomplete satisfaction

Active Publication Date: 2019-12-24
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Although existing lithography technologies have generally met the intended goals, they still cannot fully meet the needs of all aspects
For example, the problems caused by the reuse of EUV masks in the EUVL process

Method used

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  • Method and system for cleaning photomask
  • Method and system for cleaning photomask
  • Method and system for cleaning photomask

Examples

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Embodiment Construction

[0033] Many different implementation methods or examples are provided below to implement different features of various embodiments. Examples of specific components and their arrangements are described below to illustrate the present disclosure. Of course, these are just examples and should not limit the scope of the present disclosure. For example, when it is mentioned in the description that a first element is formed on a second element, it may include an embodiment in which the first element is in direct contact with the second element, and may also include an embodiment in which other elements are formed on the first and second elements. An embodiment between a second element where the first element is not in direct contact with the second element. In addition, repeated symbols or symbols may be used in different embodiments, and these repetitions are only for the purpose of simply and clearly describing the present disclosure, and do not mean that there is a specific rela...

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Abstract

The invention provides a system and method for cleaning a photomask. The method includes: mixing a first chemical solution and a second chemical solution; and discharging the mixed chemical solution through an outlet of a nozzle to a surface of a photomask having a ruthenium (Ru) layer. Wherein, the first chemical solution is configured to remove contaminant particles from the surface of the photomask, and the second chemical solution is configured to provide electrons to the first chemical solution.

Description

technical field [0001] The present disclosure relates to a method and system for cleaning a photomask. Background technique [0002] The semiconductor integrated circuit (IC) industry has experienced rapid growth. Advances in integrated circuit materials and design have produced generations of integrated circuits, each generation having smaller and more sophisticated circuits. In the process of integrated circuit development, while the functional density (that is, the number of interconnected devices per chip) gradually increases, the geometric size (that is, the smallest component (or line) that can be produced using process steps) gradually shrinks . This scaling down process generally offers the advantages of increased yield and reduced associated costs. To achieve these advances, corresponding developments in IC process and manufacturing are required. For example, the need to implement higher resolution lithography processes has developed. One such lithography techn...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F1/82
CPCC11D3/3947C11D7/08C11D7/10C11D7/265C11D7/34G03F1/82B08B3/08C11D2111/20C11D2111/22B08B3/02B08B3/10G03F7/2004
Inventor 林冠文吕启纶沈经纬吴书贤
Owner TAIWAN SEMICON MFG CO LTD
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