Method for transferring graphene by using micro-molecule paraffin

A graphene and small molecule technology, applied in the field of small molecule paraffin transfer graphene, can solve the problems that affect the performance of graphene devices and cannot completely remove the polymer layer, etc.

Active Publication Date: 2017-03-08
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of the fact that the existing transfer graphene method cannot completely remove the polymer layer, so that there are residues on the graphene surface that affect the pe

Method used

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  • Method for transferring graphene by using micro-molecule paraffin

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] Graphene was grown by CVD to obtain a graphene film grown on copper foil, one side of the above-mentioned graphene film material was etched in oxygen plasma for 10 min, and the other side was to be transferred. Heat solid paraffin (melting point: 58-62°C) to 70°C to become liquid, spin-coat the above-mentioned paraffin onto the copper sheet with graphene at 500rpm to form a paraffin / graphene / copper sheet sandwich-like composite layer, and combine the above The layer was cooled to room temperature and washed with (NH 4 ) 2 S 2 o 8 The solution etches away the copper sheet, resulting in a paraffin / graphene film, which is washed multiple times with deionized water and transferred to the target substrate. Put the above-mentioned paraffin / graphene / substrate in the surrounding environment for 1 hour, so that the layers of the paraffin / graphene / substrate can be in better contact with each other. The above-mentioned composite layer was annealed to remove the paraffin layer....

Embodiment 2

[0035] Graphene was grown by CVD to obtain a graphene film grown on copper foil, one side of the above-mentioned graphene film material was etched in oxygen plasma for 15 minutes, and the other side was to be transferred. Heat solid paraffin (melting point: 58-62°C) to 75°C to become liquid, spin-coat the above-mentioned paraffin on the copper sheet with graphene at 1000rpm to form a paraffin / graphene / copper sheet sandwich-like composite layer, and combine the above The layer was cooled to room temperature and washed with (NH 4 ) 2 S 2 o 8 The solution etches away the copper sheet, resulting in a paraffin / graphene film, which is washed multiple times with deionized water and transferred to the target substrate. Put the above-mentioned paraffin / graphene / substrate in the surrounding environment for 1 hour, so that the layers of the paraffin / graphene / substrate can be in better contact with each other. The above composite layer was annealed to remove the paraffin layer. The an...

Embodiment 3

[0037] Graphene was grown by CVD to obtain a graphene film grown on copper foil, one side of the above-mentioned graphene film material was etched in oxygen plasma for 30 min, and the other side was to be transferred. Heat solid paraffin (melting point: 58-62°C) to 80°C to become liquid, spin-coat the above-mentioned paraffin on the copper sheet with graphene at 3000rpm to form a paraffin / graphene / copper sheet sandwich-like composite layer, and combine the above The layer was cooled to room temperature and washed with (NH 4 ) 2 S 2 o 8 The solution etches away the copper sheet, resulting in a paraffin / graphene film, which is washed multiple times with deionized water and transferred to the target substrate. Put the above-mentioned paraffin / graphene / substrate in the surrounding environment for 1 hour, so that the layers of the paraffin / graphene / substrate can be in better contact with each other. The above composite layer was annealed to remove the paraffin layer. The anneal...

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Abstract

The invention relates to a method for transferring graphene by using micro-molecule paraffin. The method comprises the following steps: preparing a graphene film growing on a copper foil by using a CVD (chemical vapor deposition) method, and then etching the graphene film away from one surface of the copper foil by using oxygen plasmas to ensure that the graphene film is remained on a single surface of the copper foil; spin-coating molten and heated paraffin to the graphene film at a certain rotating speed; after the graphene film is cooled to room temperature, corroding off the copper foil by using corrosive liquid; infiltrating the paraffin/graphene film by using clear water for multiple times, and then transferring the film to a target base; and drying the film for a plurality of hours until graphene and the base are adhered tightly, annealing by using an annealing furnace to remove the paraffin, thereby obtaining the graphene film transferred to the target base. The obtained graphene film, compared with a graphene film transferred by using macromolecules, has a cleaner surface, namely a support film is removed more thoroughly, and the continuity and good electrical conductivity of the graphene film are kept. By use of the method, graphene can be cleanly transferred to any base on a large scale.

Description

technical field [0001] The invention relates to a method for transferring graphene, in particular to a method for transferring graphene with small molecule paraffin. Background technique [0002] The chemical vapor deposition method has been able to grow graphene on metal in a large area and with high quality, thus attracting the unremitting efforts of many scientific researchers. Among the various applications of graphene, how to transfer CVD-grown graphene films from metal substrates to other target substrates while retaining the high performance of graphene is still a difficult problem, especially in the application of electrical devices. At present, the method of using different kinds of polymers to realize the transfer of graphene has been widely used, such as polymethyl methacrylate (PMMA), polydimethylsiloxane (PDMS), thermo-release tap (TRT), poly Carbonates (PC), especially self-releasing polymers and aromatics. Because these polymers are resistant to pressure and...

Claims

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Application Information

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IPC IPC(8): C01B32/194
CPCC01B2204/22C01P2004/03
Inventor 封伟徐莺沈永涛
Owner TIANJIN UNIV
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