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Heating device for high-temperature thin film deposition

A thin film deposition and heating device technology, applied in the direction of ion implantation plating, gaseous chemical plating, coating, etc., can solve the problems affecting the surface morphology and conductivity of YBCO strips, and the discharge of electrode sheets and basebands, etc., to achieve High energy utilization rate, reduced preparation cost, and uniform temperature distribution

Inactive Publication Date: 2017-03-22
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

However, in this patent, when the heating electrode heats the moving metal substrate base belt, it often causes discharge between the electrode sheet and the base belt due to poor contact.
The local high temperature caused by this discharge will melt the base tape and affect the surface morphology and electrical conductivity of the YBCO tape.

Method used

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  • Heating device for high-temperature thin film deposition
  • Heating device for high-temperature thin film deposition
  • Heating device for high-temperature thin film deposition

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Embodiment Construction

[0035] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0036] Will figure 1 The device shown is used in the second generation high-temperature superconducting coated conductor YBa 2 Cu 3 o 7-x (YBCO) film preparation. Cut a section of Hastelloy base band (LaMnO 3 / homo-epiMgO / IBAD-MgO / SDP-Y 2 o 3 / Hastelloy), grind the two sides of the metal substrate to remove the oxide deposited on the side to achieve good electrical contact, and then weld it end to end to the stainless steel traction belt by welding, and finally according to In the above embodiment, the base belt of the metal substrate is fixed, the stainless steel traction belt is connected to the winding reel, and the circuit is connected. Evacuate the growth chamber of the MOCVD system to below 1 Pa. Weigh Y(TMHD) of 128.4mg of metal organic source respectively 3 , 143mg of Gd(TMHD) 3 , 696mg of Ba(TMHD) 2 , 356.885mg of Cu(TMHD) 2 and 16....

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Abstract

The invention belongs to the technical field of thin film preparation, and particularly relates to a heating device for high-temperature thin film deposition. The heating device comprises two electrode assemblies, wherein current I is led onto a metal substrate base band from two edges of the metal substrate base band through electrodes and flows on the metal substrate base band; the metal substrate base band (Hastelloy with high electrical resistivity and the like) is heated up under the action of self resistance to reach the temperature required for YBCO growth; and a deposition area is positioned between the two electrode assemblies. The heating device is simple in principle and structure, quick in heating and high in energy efficiency, can be used for heating a banded metal substrate or a banded metal substrate on which a (conductive or insulating) buffer layer is prepared, and can realize continuous winding preparation of single-faced or double-faced YBCO long strips through eliminating discharge caused by poor contact between the electrodes and the base band.

Description

technical field [0001] The invention belongs to the technical field of thin film preparation, and in particular relates to the preparation of thin films in a high-temperature environment on a stationary or moving long strip-shaped metal substrate, which can be used in thin film preparation processes such as sputtering, evaporation, PLD, and MOCVD, and is specifically a method for high-temperature thin films. Deposition heating device. Background technique [0002] In the field of thin film preparation, in order to realize the controlled growth of the thin film, and then achieve the purpose of controlling the physical and chemical properties of the thin film, it is usually necessary to heat the substrate on which the thin film grows. [0003] Many manufacturers and research institutes are concentrating on designing more superior reaction chambers. To match the design of the reaction chamber, the heater must also be improved accordingly. Since the gas reaction in the chamber ...

Claims

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Application Information

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IPC IPC(8): C23C16/46C23C16/54C23C14/56C23C14/08C23C16/40
CPCC23C16/46C23C14/08C23C14/541C23C14/562C23C16/40C23C16/545
Inventor 陶伯万刘青赵瑞鹏张宇希李言荣
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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