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Thin film transistor, manufacturing method thereof, display substrate and display device

A technology for thin film transistors and fabrication methods, applied in transistors, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve problems such as unstable threshold voltage, unfavorable applications, increased cost and process complexity, etc., and achieves improved stability, Improved uniformity and low cost

Active Publication Date: 2017-03-29
BOE TECH GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In the existing low-temperature polysilicon thin film, due to the existence of a large number of grain boundary defect states, the threshold voltage of the thin film transistor is unstable and the carrier mobility is not good, and when the size of the thin film transistor shrinks, the problem of unstable threshold voltage will become more serious
Currently, ELA (excimer laser annealing) and CW solid-state laser two-step processing methods are generally used to improve the uniformity of low-temperature polysilicon films, but this increases the cost and complexity of the process, which is not conducive to practical applications.

Method used

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  • Thin film transistor, manufacturing method thereof, display substrate and display device
  • Thin film transistor, manufacturing method thereof, display substrate and display device
  • Thin film transistor, manufacturing method thereof, display substrate and display device

Examples

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Embodiment 1

[0049] This embodiment provides a method for manufacturing a thin film transistor, the thin film transistor includes a gate, a source, a drain and an active layer, and the step of forming the active layer includes:

[0050] Form the graphics of the insulation layer;

[0051] Forming a pattern of an amorphous silicon layer on the heat insulating layer, the pattern of the amorphous silicon layer including a first part located on the heat insulating layer and a second part beyond the heat insulating layer;

[0052] The pattern of the amorphous silicon layer is processed by laser annealing process to form the active layer composed of polysilicon.

[0053]In this embodiment, the pattern of the amorphous silicon layer includes a first part located on the thermal insulation layer and a second part beyond the thermal insulation layer. After the amorphous silicon layer is laser annealed, the second part beyond the thermal insulation layer is cooled It will nucleate first if it is fast...

Embodiment 2

[0089] This embodiment provides a kind of thin film transistor, which is manufactured by adopting the above-mentioned manufacturing method. The thin film transistor includes an active layer composed of polysilicon located on the heat insulating layer, and the active layer includes a part located on the heat insulating layer. And the part beyond the insulation layer.

[0090] Since the pattern of the amorphous silicon layer is formed on the thermal insulation layer during the formation of the active layer of the thin film transistor, the pattern of the amorphous silicon layer includes a first part located on the thermal insulation layer and a portion beyond the thermal insulation layer. The second part outside of the thermal insulation layer is processed by laser annealing process on the pattern of the amorphous silicon layer. After the laser annealing of the amorphous silicon layer, the second part beyond the thermal insulation layer is cooled faster and will first nucleate , ...

Embodiment 3

[0092] This embodiment provides a display substrate, including the above-mentioned thin film transistor. Since the carrier mobility of the thin film transistor is relatively high and the threshold voltage is relatively stable, compared with the existing display substrate, the performance of the display substrate of this embodiment will be more reliable.

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Abstract

The invention provides a thin film transistor and a manufacturing method thereof, a display substrate and a display device, and belongs to the technical field of display. The thin film transistor comprises a gate electrode, a source electrode, a drain electrode and an active layer, the step of forming the active layer comprises: forming a pattern of a heat preservation layer; forming a pattern of a noncrystalline silicon layer on the heat preservation layer, wherein the pattern of the noncrystalline silicon layer comprise a first part located on the heat preservation layer and a second part exceeding the heat preservation layer; and treating the pattern of the noncrystalline silicon layer by using a laser annealing process to grow crystalline grains on the noncrystalline silicon layer along a direction from the second part to the first part so as to form the active layer composed of polycrystalline silicon. The technical scheme provided by the invention can prepare the polycrystalline silicon active layer with large crystalline grain size and better uniformity at a lower cost, and thus the carrier mobility of the thin film transistor and the stability of a threshold voltage are improved.

Description

technical field [0001] The present invention relates to the field of display technology, in particular to a thin film transistor, a manufacturing method thereof, a display substrate and a display device. Background technique [0002] Active Matrix Organic Light Emitting Diode (AMOLED) has the advantages of low energy consumption, low production cost, wide viewing angle, and fast response speed, so AMOLED has gradually replaced traditional liquid crystal displays. [0003] At present, AMOLED drives the organic light-emitting layer to emit light through a drive transistor (Drive Thin Film Transistor, DTFT). In order to make the DTFT have a higher carrier mobility, low-temperature polysilicon is generally used to make the active layer of the DTFT. [0004] In the existing low-temperature polysilicon thin film, due to the existence of a large number of grain boundary defect states, the threshold voltage of the thin film transistor is unstable and the carrier mobility is not good...

Claims

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Application Information

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IPC IPC(8): H01L21/77H01L29/786H01L27/12
CPCH01L27/1222H01L27/1281H01L29/78675H01L29/66757H01L27/1285H10K59/1213H10K50/87
Inventor 李小龙李栋张慧娟刘政
Owner BOE TECH GRP CO LTD
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