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A kind of semiconductor device and its preparation method

A semiconductor and device technology, which is applied in the field of semiconductor devices and their preparation, can solve the problems of uneven distribution of breakdown voltage and unrepeatable breakdown voltage of semiconductor devices, etc., and achieve the solution of uneven distribution of breakdown voltage and uniform breakdown performance Effect

Active Publication Date: 2019-09-06
GPOWER SEMICON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of this, an embodiment of the present invention provides a semiconductor device and a manufacturing method thereof to solve the problem of uneven distribution of breakdown voltages of semiconductor devices on the same wafer and non-repeatable breakdown voltages of semiconductor devices on different wafers in the prior art. technical issues

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  • A kind of semiconductor device and its preparation method
  • A kind of semiconductor device and its preparation method
  • A kind of semiconductor device and its preparation method

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Experimental program
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Embodiment 1

[0046] figure 1 It is a schematic structural diagram of a semiconductor device provided in Embodiment 1 of the present invention. Specifically, Embodiment 1 of the present invention provides a HEMT device with a groove junction termination structure. Such as figure 1 As shown, the semiconductor device includes:

[0047] Substrate 101;

[0048] a channel layer 102 located above the substrate 101;

[0049] The barrier layer 103 located on the side of the channel layer 102 away from the substrate 101, and a two-dimensional electron gas (Two-dimensional electron gas, 2DEG) is formed at the interface between the barrier layer 103 and the channel layer 102;

[0050] At least one groove structure 104 located at a predetermined position of the barrier layer 103, the bottom of the groove structure 104 terminates at the interface between the barrier layer 103 and the channel layer 102;

[0051] The regrown layer 105 on the barrier layer 103 and the groove structure 104 away from the s...

Embodiment 2

[0099] Figure 5 It is a schematic structural diagram of a semiconductor device provided in Embodiment 2 of the present invention. Specifically, Embodiment 2 of the present invention provides a semiconductor device with a metal field plate, and the metal field plate may be a source metal field plate, or is the drain metal field plate, and the embodiment of the present invention is described by taking the source metal field plate as an example. This embodiment is based on the above-mentioned first embodiment, and is improved on the basis of the first embodiment. Such as Figure 5 As mentioned above, the semiconductor device provided in Embodiment 2 of the present invention may include:

[0100] Substrate 101;

[0101] a channel layer 102 located above the substrate 101;

[0102] The barrier layer 103 located on the side of the channel layer 102 away from the substrate 101, 2DEG is formed at the interface between the barrier layer 103 and the channel layer 102;

[0103] At ...

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Abstract

The embodiments of the invention disclose a semiconductor device and a preparation method thereof. The semiconductor device comprises a substrate, a channel layer arranged on the substrate, a barrier layer arranged on the side of the channel layer away from the substrate, at least one groove structure arranged at a preset position of the barrier layer, a re-growth layer arranged on the side of the barrier layer and the groove structure away from the channel layer and covering the barrier layer and the groove structure, and a source, a gate and a drain arranged on the side of the barrier layer away from the channel layer, wherein two-dimensional electron gas is formed at the interface of the barrier layer and the channel layer, the bottom interface of the re-growth layer in the groove structure contacts the upper surface of the channel layer, the groove structure and the re-growth layer on the groove structure form a groove junction terminal structure, and the gate is arranged between the source and the drain and on the side of the groove junction terminal structure away from the drain. In conclusion, the structure can ensure adjustable distribution of electric field at the edge of the gate and uniform distribution of breakdown voltages of semiconductor devices on the same wafer.

Description

technical field [0001] Embodiments of the present invention relate to the technical field of semiconductors, and in particular to a semiconductor device and a manufacturing method thereof. Background technique [0002] Nitride semiconductor materials, including GaN, have high saturation electron mobility, high breakdown voltage and wide band gap. Because of these characteristics, GaN-based high electron mobility transistor (High Electron Mobility Transistor, HEMT) devices attract Attention of researchers and semiconductor manufacturers. GaN HEMT devices have extremely broad application prospects in the fields of high-speed, high-efficiency, high-frequency communications and power electronics in the next 20 years. [0003] In the actual GaN HEMT, the withstand voltage value can generally only reach 20-30% of the theoretical value. This is because the electric field concentration phenomenon will occur under the high voltage applied to the drain terminal near the gate edge of ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/778H01L29/06H01L21/336
Inventor 吴传佳
Owner GPOWER SEMICON