Vertically-structured quantum dot light emitting field effect transistor and preparation method thereof

Abstract

The invention discloses a vertically-structured quantum dot light emitting field effect transistor and a preparation method thereof. The method includes the following steps of: the preparation of a quantum dot light emitting unit: a hole transport layer, a quantum dot light emitting layer, an electron transport layer and a source electrode are prepared on a drain electrode sequentially; and the preparation of a capacitor unit: an insulating layer and a gate electrode are sequentially prepared on the above source electrode. With the vertically-structured quantum dot light emitting field effect transistor of the invention adopted, high output current can be realized under low operating voltage. Compared with a traditional horizontal FET structure, the vertically-structured quantum dot light emitting (QLED) field effect transistor of the invention is easier to integrate an QLED and realize multi-function combination; the QLED field effect transistor of the invention can be made of fully inorganic materials, and therefore, the QLED field effect transistor has higher mobility compared with transistors made of organic semiconductor materials, and thus, the improvement of the performance of the device can be benefitted; and the QLED field effect transistor of the invention can be prepared by using a whole-solution method, and therefore, cost is low, and process is simple.

Description

technical field [0001] The invention relates to the technical field of field effect transistors, in particular to a vertical structure quantum dot light emitting field effect transistor and a preparation method thereof. Background technique [0002] In the context of the development of microelectronics technology, Field Effect Transistor (FET) is one of the most widely used devices in modern microelectronics. Low, no secondary breakdown phenomenon and wide safe working area, etc., and play an important role in data storage circuits, amplifier circuits, logic circuits, optoelectronic integrated circuits, and flat-panel display electronic devices. At present, it has been reported in the literature that the FET is integrated with an organic light-emitting device, so that the FET is used in a drive unit of a flat panel display, and the source-drain current is controlled by the gate voltage of the transistor, thereby controlling the device to emit light. [0003] High-performanc...

AI Technical Summary

Problems solved by technology

The mainstream preparation technology of OFET includes vacuum coating technology represented by thermal evaporation and sputtering, which is characterized by high uniformity of film formation, controllable thickness and relatively high field effect mobility, etc. The disadvantages are that the equipment is complicated and the cost is low. High, not conducive to large-scale industrial applications

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