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Pre-emphasis circuit based on unidirectional regeneration comparator

A pre-emphasis and comparator technology, applied in the direction of electrical components, pulse processing, pulse technology, etc., can solve the problems of dependence, many circuit modules, and increase the complexity of the circuit, so as to improve the load capacity, high precision and stability, The effect of simple structure

Active Publication Date: 2017-04-26
NINGBO UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Digital signal processing technology can convert non-return-to-zero (NRZ) signals into pre-emphasized signals, but this process requires a series of signal generators, inverters, pulse generators, delayers, amplifiers, and power combiners. The device constitutes a finite impulse response digital filter (FIR). The method is relatively complicated and depends on a huge digital signal processing instrument; the pulse parallel synthesis circuit can synthesize pulse signals with different amplitudes and periods into a nonlinear pre-emphasis signal, but the circuit module is relatively complex. Many, the delay is large, and it is difficult to guarantee the accuracy and stability; the low-voltage differential signal (LVDS) circuit can synthesize the pre-emphasis signal through the current superposition principle, but it needs additional coding control of the input, which will increase the complexity of the circuit

Method used

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  • Pre-emphasis circuit based on unidirectional regeneration comparator
  • Pre-emphasis circuit based on unidirectional regeneration comparator
  • Pre-emphasis circuit based on unidirectional regeneration comparator

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Embodiment

[0021] Example: such as figure 1As shown, a pre-emphasis circuit based on a unidirectional regenerative comparator includes a first MOS transistor M1, a second MOS transistor M2, a third MOS transistor M3, a fourth MOS transistor M4, a fifth MOS transistor M5, and a sixth MOS transistor Tube M6, the seventh MOS tube M7, the eighth MOS tube M8, the ninth MOS tube M9, the tenth MOS tube M10, the eleventh MOS tube M11 and the voltage-controlled voltage source VCVS; the voltage-controlled voltage source VCVS has a positive input terminal , negative input terminal, bias terminal and output terminal; the first MOS transistor M1, the second MOS transistor M2, the third MOS transistor M3 and the fourth MOS transistor M4 are all P-type MOS transistors, the fifth MOS transistor M5, the The sixth MOS transistor M6, the seventh MOS transistor M7, the eighth MOS transistor M8, the ninth MOS transistor M9, the tenth MOS transistor M10 and the eleventh MOS transistor M11 are all N-type MOS t...

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Abstract

The present invention discloses a pre-emphasis circuit based on a unidirectional regeneration comparator. The circuit comprises a first MOS tube, a second MOS tube, a third MOS tube, a fourth MOS tube, a fifth MOS tube, a sixth MOS tube, a seventh MOS tube, an eighth MOS tube, a ninth MOS tube, a tenth MOS tube, an eleventh MOS tube and a voltage controlled voltage source; the first MOS tube, the second MOS tube, the third MOS tube, the fourth MOS tube, the fifth MOS tube, the sixth MOS tube, the seventh MOS tube, the eighth MOS tube and the ninth MOS tube form a regeneration comparator; the tenth MOS tube and the eleventh MOS tube are two auxiliary switch tubes; and the voltage controlled voltage source is taken as a buffer stage. The pre-emphasis circuit based on the unidirectional regeneration comparator is simple in structure and small in delay, and has high precision and stability.

Description

technical field [0001] The invention relates to a pre-emphasis circuit, in particular to a pre-emphasis circuit based on a unidirectional regenerative comparator. Background technique [0002] With the continuous shrinking of semiconductor process feature size and the increase of integrated circuit density and functional complexity, parasitic effects and power consumption problems are particularly significant, making traditional electrical interconnection technology gradually enter the "electronic bottleneck" state. Because the optical interconnection system has the advantages of high speed, high density and low power consumption, it is expected to solve the bottleneck problem caused by the electrical interconnection. Among them, photonic devices such as electro-optic modulators, optical switches and germanium-silicon photodetectors have been developed rapidly. [0003] Silicon-based electro-optic modulators realize electro-optical signal modulation by changing the refracti...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03K5/1534
Inventor 陈伟伟张亚伟李文辉汪鹏君杨建义
Owner NINGBO UNIV
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