Large-area non-aqueous transferring method of nano material

A nanomaterial, water transfer technology, applied in the direction of nanocarbon, nanotechnology, nanotechnology for materials and surface science, etc., to achieve good fidelity effect

Inactive Publication Date: 2017-05-31
NANJING UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It uses water in the peeling process, which does not belong to the category of dry transfer. At the same time, because some materials are sensitive to water or other aqueous solvents, the above method cannot be used for transfer. Therefore, it is urgent to develop a method for transferring nanomaterials without water and large areas.

Method used

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  • Large-area non-aqueous transferring method of nano material
  • Large-area non-aqueous transferring method of nano material
  • Large-area non-aqueous transferring method of nano material

Examples

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Embodiment Construction

[0023] Attached below Figures 1 to 3 An example of the technical solution of the invention will be described.

[0024] Silicon wafers treated with a plasma cleaning machine, the cleaned silicon wafers are modified in a toluene solution of octadecyltrimethoxysilane at a temperature of 60 degrees Celsius for 12 hours, and a silane-based layer is formed on the surface of the silicon wafers to make the silicon wafers hydrophobic Effect.

[0025] Tungsten diselenide samples were prepared on modified silicon wafers by mechanical exfoliation, such as figure 1 Shown is a tungsten diselenide sample.

[0026] On the tungsten diselenide material on the silicon wafer, the dichloromethane solution of one deck polymethyl methacrylate is spin-coated, and the mass volume ratio of the dichloromethane solution of polymethyl methacrylate is 3%; Material variance adjustments.

[0027] Cover the film made of polydimethylsiloxane on the polymer film of polymethyl methacrylate formed by spin co...

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Abstract

The invention discloses a large-area non-aqueous transferring method of a nano material. The method is characterized in that silicon dioxide or other materials of which the surfaces are rich in hydroxide radical are used as a substance; the nano materials to be transferred are prepared on a dewater silicon chip; a polymer film is spirally coated on the silicon chip with a sample, and a PDMS film used as an auxiliary material covers the silicon sheet which is spirally coated on the polymer material and then slowly uncovered; the sample is transferred to the PDMS film together with the polymer film; the PDMS carrying the sample is covered on the targeted substance and then taken away by a thermal treating method, so that the polymer film and the sample are kept on the target substance; the polymer can be washed with a polymer soluble solution after annealing for a while, so that the targeted material can be transferred to the targeted substance.

Description

technical field [0001] The invention belongs to the field of preparation of nanometer materials, and in particular relates to a method for large-area dry transfer of nanometer materials. Background technique [0002] Nowadays, nanomaterials have become the focus of all scientific researchers. It has small size, unique properties, and wide performance. It has been applied to various fields such as transistors, catalysts, and solar cells. However, the preparation of these nanomaterials is limited by conditions, not any material is suitable as a substrate for material preparation, and the properties of different nanomaterials are quite different, so a single material is often limited in use, which requires us to use Prepared nanomaterials are transferred. [0003] At present, the most transfer method is mainly the method of etching the substrate with the assistance of polymer film. This approach is sometimes limited due to material sensitivity to water or etching reagents. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B19/04C01B32/19B82Y30/00
CPCB82Y30/00C01B19/007
Inventor 李海冉飞荣杨鹏张昊房向茹石晓桐吴诗语
Owner NANJING UNIV OF TECH
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