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STT-MRAM storage unit

A storage unit, ferromagnetic metal technology, applied in the direction of electrical components, electric solid devices, circuits, etc., can solve the problems of STT-MRAM storage unit performance needs to be improved, to improve product integration and stability, improve coupling strength, The effect of simplifying the production process

Inactive Publication Date: 2017-05-31
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The object of the present invention is to provide a kind of STT-MRAM storage unit, to solve the problem that the performance of STT-MRAM storage unit needs to be improved in the prior art

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Embodiment Construction

[0019] In order to make the objects, features and advantages of the present invention more comprehensible, please refer to the accompanying drawings. It should be noted that the structures, proportions, sizes, etc. shown in the drawings attached to this specification are only used to match the content disclosed in the specification, for those who are familiar with this technology to understand and read, and are not used to limit the implementation of the present invention. Limiting conditions, so there is no technical substantive meaning, any modification of structure, change of proportional relationship or adjustment of size, without affecting the effect and purpose of the present invention, should still fall within the scope of the present invention. The disclosed technical content must be within the scope covered.

[0020] Such as figure 1 As shown, the present invention provides a STT-MRAM memory cell, including a selection transistor 100 and a magnetic tunnel junction 20...

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Abstract

The invention provides an STT-MRAM storage unit. The STT-MRAM storage unit comprises a selective transistor and a magnetic tunnel junction, wherein the selective transistor comprises a substrate, a first doping region, a second doping region and a gate; and the magnetic tunnel junction comprises a free ferromagnetic metal layer, a fixed ferromagnetic metal layer and a barrier layer, the barrier layer is arranged between the free ferromagnetic metal layer and the fixed ferromagnetic metal layer, the magnetic tunnel junction is arranged on the first doping region, a magnetic moment direction of the fixed ferromagnetic metal layer remains constant, and a magnetic moment direction of the free ferromagnetic metal layer is changeable. According to the STT-MRAM storage unit provided by the invention, the magnetic tunnel junction is arranged on the first doping region of the selective transistor, so that the coupling strength between the magnetic tunnel junction and the selective transistor is enhanced, and the read-writing operations can be realized by virtue of the magnetic moment directions of the free ferromagnetic metal layer and the fixed ferromagnetic metal layer; and meanwhile, by virtue of the structure of the STT-MRAM storage unit, the production process can be simplified, so that the integration level and stability of the product are improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to an STT-MRAM storage unit. Background technique [0002] STT-MRAM (spin torque transfer-magnetic random access memory) is a new type of memory with the advantages of non-volatility, fast working speed, and unlimited erasing times. STT-MRAM has both DRAM (dynamic random access memory) and SRAM (system management random access memory) high performance, but also has low power consumption and low cost of flash memory. STT-MRAM storage technology is the most likely advanced storage technology to replace DRAM and SRAM. [0003] In the prior art, STT-MRAM usually includes a magnetic tunneling junction (magnetic tunneling junction, MJT) and a selection transistor. The MJT includes a ferromagnetic metal fixed layer, a ferromagnetic metal free layer, and a barrier layer between the two. By accessing The current controls the magnetic moment direction of the ferromagnetic metal fr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/22
CPCH10B61/00
Inventor 尚恩明胡少坚陈寿面
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT