Solar aluminum-back full-coverage main-grid-free crystallization silicon cell piece and production technology thereof

Abstract

The invention provides a solar main-grid-line-free crystallization silicon cell piece which can reduce production cost and improve generating capacity and a production technology thereof. Two ends in the perpendicular direction of a thin grid line of the cell piece are provided with rectangular thin grid line end sockets, a thickened thin grid line perpendicular to the thin grid line is arranged between the rectangular thin grid line end sockets, main grid line retaining portions are arranged between the rectangular thin grid line end sockets and the thickened thin grid line, a back electrode is arranged corresponding to the main grid line remaining portions on the front side of the cell piece, the cell piece is all covered by an aluminum back, and the back electrode is arranged on the aluminum back. The production technology comprises the steps of firstly printing aluminum back field of the cell piece, namely fully covering the surface of a silicon wafer; then printing the back electrode, namely printing on the surface of the aluminum back field; putting into an oven to be dried and sintered; then printing a front-side electrode of the cell piece; finally sintering and forming. The solar main-grid-line-free crystallization silicon cell piece disclosed by the invention reduces the cost, improves the generating capacity and has a good market popularization prospect.

Description

technical field [0001] The invention belongs to the technical field of new energy sources, and in particular relates to solar energy, in particular to a solar aluminum back full-covered non-busbar crystalline silicon cell and a production process thereof. Background technique [0002] A few days ago, modules based on crystalline silicon cells accounted for more than 80% of the global photovoltaic module market. Since the development of crystalline silicon cells, their production cost and power generation have become the main constraints on their development. Under the urging of the goal of low-cost and high-yield cells, more and more companies are focusing on the improvement of cell technology, including busbar-free cell technology, IBC cells, monocrystalline PERC cells, HIT Heterojunction cells emerged as the times require. However, most of these technologies are aimed at the improvement of the front electrode of the battery sheet or the improvement of its own structure, b...

AI Technical Summary

Problems solved by technology

[0006] 1. In the past, the electrode printing method was basically applied to conventional cells, and there was no case for the application of non-busbar cells.

[0007] 2. The previous electrode printing sequence: back electrode-aluminum back field-front electrode, but the back electrode described in the present invention cannot achieve a good printing effect

[0008] 3. In the past electrode printing, the front electrode and the back electrode are not symmetrically distributed, which is easy to cause stress concentration during welding, and will cause repeated damage to the PN junction of the battery sheet by sintering of the front and back electrodes

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