Battery preparation method for improving perc back passivation effect

Abstract

The invention provides a battery manufacturing method capable of improving PERC rear passivation effect. The method includes the steps of cleaning, diffusing, phosphorus washing, thermooxidizing, rear passivating, front side film plating, laser grooving and screen printing. According to the method provided in the invention, the impurities existed after phosphorus washing can be eliminated through thermooxidizing, and a thin SiOx layer can be easily formed on the surface of a silicon chip during the thermooxidizing process. The SiOx layer can improve the rear passivation effect of MAIA. The compactness of alumina can be increased, and the EL yield rate can be increased, thereby increasing the rear passivation efficiency of MAIA.

Description

technical field [0001] The invention relates to the technical field of battery technology, in particular to a battery preparation method for improving the PERC back passivation effect. Background technique [0002] At present, as an emerging high-efficiency battery technology, the back passivation battery can effectively passivate the back of the battery and reduce the emissivity of the back, thereby effectively absorbing the long-wavelength light and making the battery efficiency a big leap. ; And due to the intervention of the passivation layer, the warpage of the battery sheet has also been improved to a certain extent. [0003] The conventional battery preparation process successively goes through several steps such as cleaning, diffusion, phosphorus washing, MAIA, positive plating, laser grooving, and printing. Among them, silicon wafers are directly MAIAed after phosphorus washing, but there is no wind knife after phosphorus washing. Thoroughly blow dry, the surface o...

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Problems solved by technology

[0003] The conventional battery preparation process successively goes through several steps such as cleaning, diffusion, phosphorus washing, MAIA, positive plating, laser grooving, and printing. Among them, silicon wafers are directly MAIAed after phosphorus washing, but there is no wind knife after phosphorus washing. Thoroughly blow dry, the surface of the silicon wafer is easy to leave part of the chemical solution, and there are watermarks on the surface, etc. These residues will affect AlOx, affect the rear passivation effect of MAIA, and eventually lead to abnormal electroluminescence EL, such as watermarks , black edges, black dots, etc., which affect the efficiency

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