Photodiode device, photodiode detector and manufacturing method thereof

Abstract

A photodiode device, a photodiode detector, and a method of manufacturing the same are disclosed. According to an embodiment, a photodiode device may include: growing an epitaxial layer on a first surface of a substrate, wherein the epitaxial layer is lightly doped with a first type, and forming a layer in the substrate lightly doped with the first type The first type of heavily doped region in contact with the impurity epitaxial layer; from the side of the second surface of the substrate opposite to the first surface, the substrate is thinned and the first type of heavily doped region is exposed; from the side of the substrate On the second surface side, the first type heavily doped region is patterned to form a groove therein, and the groove penetrates the first type heavily doped region into the epitaxial layer, wherein the patterned first type The heavily doped region serves as a first electrode region of the photodiode device; and a second type heavily doped region is formed at the bottom of the trench, which serves as a second electrode region of the photodiode device.

Description

technical field [0001] The present disclosure relates to photodetection devices, and in particular, to photodiode devices and photodiode detectors with improved performance and methods of manufacturing the same. Background technique [0002] The semiconductor photodiode array detects the incident light through the ionization reaction of the incident light (for example, the direct incident light, or the visible light produced by X-rays in the scintillator) with the atoms in the semiconductor, thereby generating non-equilibrium carriers. Parameters to measure the performance of photodiode arrays include resolution, signal-to-noise ratio, readout speed, photoresponse, and charge crosstalk between pixels. [0003] For example, X-rays passing through the short-wavelength visible light produced by the scintillator generate electron and hole carriers within a shallow depth on one side of the silicon photonics device. These photogenerated carriers drift or diffuse in the device and...

AI Technical Summary

Problems solved by technology

However, a wafer that is too thin will reduce its overall mechanical strength and be prone to warping and debris

Wafer regrinding (to make it thinner) is also easy to introduce particle contamination, reducing the quantum efficiency of incident light collection

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