Manufacturing method of invisible cutting and back plating LED chips

A LED chip and invisible cutting technology, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of unsatisfactory LED luminous efficiency and high shedding rate of the reflective layer, and achieve the effect of improving the effect, improving the light output efficiency and reducing the shedding probability.

Active Publication Date: 2017-05-31
XIAN ZOOMVIEW OPTOELECTRONICS SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Aiming at the problems of high shedding rate of reflective layer and unsatisfactory LED luminous efficiency in the existing invisible cutting and back plating process, the present invention provides a method for manufacturing LED chips by invisible cutting and back plating

Method used

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  • Manufacturing method of invisible cutting and back plating LED chips

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Embodiment 1

[0032] A method for stealth cutting and back-plating LED chips, comprising the following steps:

[0033] a. Growing an adhesion layer: growing an adhesion layer on the back of the wafer;

[0034] b. Film: put the wafer face up and stick the back on the white film;

[0035] c. Stealth dicing: Stealth dicing of the wafer after filming;

[0036] d. Flip: Flip the wafer with the front side down and the back side up on another white film after stealth dicing, and cut off the area where the wafer is located together with the white film.

[0037] e. Metal reflective layer on the back: coat a metal reflective layer on the growth adhesion layer on the back of the wafer;

[0038] f. Splitting: splitting the wafer into single LED chips.

[0039] In step a, an adhesion layer is grown on the backside sapphire substrate of the wafer by PECVD technology, and the adhesion layer is SiO 2 Adhesive layer, the thickness of the adhesive layer is 10nm.

[0040] In step c, during stealth cuttin...

Embodiment 2

[0044] A method for stealth cutting and back-plating LED chips, comprising the following steps:

[0045] a. Growing an adhesion layer: growing an adhesion layer on the back of the wafer;

[0046] b. Film: put the wafer face up and stick the back on the white film;

[0047] c. Stealth dicing: Stealth dicing of the wafer after filming;

[0048] d. Flip: Flip the wafer with the front side down and the back side up on another white film after stealth dicing, and cut off the area where the wafer is located together with the white film.

[0049] e. Metal reflective layer on the back: coat a metal reflective layer on the growth adhesion layer on the back of the wafer;

[0050] f. Splitting: splitting the wafer into single LED chips.

[0051] In step a, an adhesion layer is grown on the backside sapphire substrate of the wafer by PECVD technology, and the adhesion layer is Si 3 N 4 Adhesive layer, the thickness of the adhesive layer is 230nm.

[0052] In step c, during stealth c...

Embodiment 3

[0056] A method for stealth cutting and back-plating LED chips, comprising the following steps:

[0057] b. Film: put the wafer face up and stick the back on the white film;

[0058] c. Stealth dicing: Stealth dicing of the wafer after filming;

[0059] d. Flip: Flip the wafer with the front side down and the back side up on another white film after stealth dicing, and cut off the area where the wafer is located together with the white film.

[0060] e. Metal reflective layer on the back: coat a metal reflective layer on the growth adhesion layer on the back of the wafer;

[0061] f. Splitting: splitting the wafer into single LED chips.

[0062] In step a, an adhesion layer is grown on the backside sapphire substrate of the wafer by PECVD technology, and the adhesion layer is Si 3 N 4 Adhesive layer, the thickness of the adhesive layer is 100nm.

[0063] In step c, during stealth cutting, the laser pulse frequency is 80 Hz, and the scribing speed is 100 mm / s.

[0064] In s...

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Abstract

The invention relates to the processing field of a semiconductor, and discloses a manufacturing method of invisible cutting and back plating LED chips; the technical point includes steps of performing chemical brightening, growth of adhesion layer, pad pasting, invisible cutting, overturning, back plating of a metal reflecting layer and a crack piece on a wafer; finally, acquiring the LED chips, wherein the wafer and a white film are bonded during the invisible cutting, thus the wafer and the white film are burned by laser; impurities generated by gasification and expansion of a sapphire substrate cannot spray on the back face of the wafer on a large area, and only can exist in a crack, thus the back face pollution is reduced, and the drop rate of the back plating layer is lowered; through growing an adhesion layer on the sapphire substrate, the dropping probability of the back plating layer is reduced from 20% in the past to 0.5%, a part of light can form full emission at a border, thus the LED lighting efficiency is improved on a certain level, and the effect is promoted by about 10%. The method solves the problem of high dropping rate of the reflecting layer and not ideal LED lighting efficiency in the existed invisible cutting and back plating technique.

Description

technical field [0001] The invention relates to the field of semiconductor processing, in particular to a method for making invisible cutting and back-plating LED chips. Background technique [0002] Invisible cutting is a laser scribing technology that has been applied to LEDs in recent years. It improves the light output efficiency of LEDs by reducing the burnt area on the side of the LED and reducing the absorption of the light-absorbing substances produced by laser burning on the light emitted by the LED chip. Stealth cutting technology can be used to replace traditional surface cutting technology. Compared with traditional cutting technology, stealth cutting technology can improve product brightness by about 7%, and improve product appearance yield by about 0.5%. The specific implicit cutting is to use the laser to focus on the inside of the LED chip, burn the sapphire substrate at a certain frequency to instantly vaporize and expand, and cut the chip. The surface cutt...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/22H01L33/46
CPCH01L33/005H01L33/22H01L33/46
Inventor 杨路华陈勘闫秋迎魏萍
Owner XIAN ZOOMVIEW OPTOELECTRONICS SCI & TECH
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