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Bottom electrode assembly and semiconductor processing equipment

A technology of electrode components and electrode plates, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as easy ignition, reduce the risk of ignition, and extend the length

Active Publication Date: 2019-03-12
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It can be seen that, since the above-mentioned insulating plug 3 uses the vertically arranged through-hole 31 to transport the cooling gas, this makes the flow direction of the cooling gas (the axial direction of the through-hole 31) parallel to the direction of the electric field (vertically downward) during the process. , while the straight-through hole 31 vertically arranged has a short distance to transport the cooling gas, so it is easy to cause sparking

Method used

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  • Bottom electrode assembly and semiconductor processing equipment
  • Bottom electrode assembly and semiconductor processing equipment
  • Bottom electrode assembly and semiconductor processing equipment

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Embodiment Construction

[0034] In order for those skilled in the art to better understand the technical solutions of the present invention, the bottom electrode assembly and semiconductor processing equipment provided by the present invention will be described in detail below in conjunction with the accompanying drawings.

[0035] Please also refer to Figure 3A-3D , The lower electrode assembly includes a lower electrode plate 11 , an insulating dielectric layer 12 and a metal base 14 arranged in sequence from top to bottom. Wherein, in the insulating medium layer 12, an insulating plug 13 penetrating through its thickness direction is provided, and the insulating plug 13 has a gas passage, and the gas outlet end and the inlet end of the gas passage are respectively located on the upper end surface and the lower end surface of the insulating plug 13, through Passing the heat exchange gas into the gas channel can transport the heat exchange gas to the lower surface of the lower electrode plate 11 and...

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Abstract

The present invention provides a lower electrode assembly and a semiconductor processing apparatus. The lower electrode assembly includes a lower electrode plate, an insulating dielectric layer and a metal base which are arranged sequentially from top to bottom; an insulating plug which passes through the insulating dielectric layer along the thickness direction of the insulating dielectric layer is arranged in the insulating dielectric layer; the insulating plug has a gas channel; the gas outgoing end and gas incoming end of the gas channel are located at the upper end surface and lower end surface of the insulating plug respectively; a heat exchange gas is introduced into the gas channel, so that temperature control on the lower electrode plate is realized; and the gas channel is a non-linear channel. According to the lower electrode assembly of the present invention, the transfer distance of the heat exchange gas can be prolonged under the same pressure, a condition that the flowing direction of the heat exchange gas in the non-linear channel is consistent with an electric field direction can be avoided, and therefore, the ignition risk of the heat exchange gas can be decreased.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a lower electrode assembly and semiconductor processing equipment. Background technique [0002] In the reaction chamber of the current plasma etching equipment, the lower electrode assembly is an extremely important assembly as the radio frequency electrode and the carrier for carrying the wafer. During the process, since the temperature of the wafer will gradually increase, when the temperature exceeds a certain threshold, it will inevitably affect the process results. For this reason, the cooling gas is delivered to the lower electrode plate in the lower electrode assembly by using the gas delivery pipeline , the lower electrode plate can be cooled, thereby indirectly controlling the temperature of the wafer placed on the lower electrode plate. [0003] During the process, it is usually necessary to apply RF bias to the lower electrode plate, and the gas delivery pi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/32H01L21/67
CPCH01J37/32H01J37/32532H01L21/67011
Inventor 苏恒毅韦刚李兴存栾大为
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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