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Indirect mmWave Signal Detector Based on Silicon-Based Slot-Coupled T-junction

A signal detector and coupling technology, used in instruments, measuring devices, measuring electrical variables, etc., can solve the problems of high frequency effect, high cost, complex structure, etc., to simplify circuit layout, improve efficiency, and high application value. Effect

Active Publication Date: 2019-01-25
SOUTHEAST UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

As we all know, accurately determining a signal requires three major parameters: frequency, phase and power, so the measurement of these three parameters is a very important task, and it can be said that it has very good potential application value in aerospace, microwave communication and other fields , in the low-frequency stage, people have studied the test structure of these three parameters quite deeply, and various signal detectors have been able to meet people's needs very well, but in the high-frequency band, especially in the In the millimeter wave frequency band, the existing frequency detectors, phase detectors, and power detectors are not only complex in structure, large in size, and high in cost, but also difficult to integrate them efficiently. In addition, because they are in the millimeter wave frequency band, each Signal detectors are bound to be made very small. If the structure is more complex, it may cause various unnecessary high-frequency effects

Method used

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  • Indirect mmWave Signal Detector Based on Silicon-Based Slot-Coupled T-junction
  • Indirect mmWave Signal Detector Based on Silicon-Based Slot-Coupled T-junction
  • Indirect mmWave Signal Detector Based on Silicon-Based Slot-Coupled T-junction

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Embodiment Construction

[0022] specific implementation plan

[0023] The indirect millimeter-wave signal detector of the silicon-based slot-coupled T-junction of the present invention is fabricated on a high-resistance Si substrate 1, and consists of a coplanar waveguide transmission line 3 and a No. 1 slot coupling structure 4-1. , No. 2 slot coupling structure 4-2, No. 3 slot coupling structure 4-3, No. 4 slot coupling structure 4-4, phase shifter 5, No. 1 SPDT switch 20, No. 2 SPDT switch 21, one It is composed of T-junction power splitter, three T-junction power combiners and six indirect thermoelectric power sensors.

[0024]The SPDT switch 20 is composed of a coplanar waveguide transmission line 3, an anchor region 22, Si 3 N 4 Composed of a dielectric layer 23, a switch pull-down electrode plate 24 and a switch beam 25, the coplanar waveguide transmission line 3 is connected to the anchor area 22, and the anchor area 22 is connected to the switch beam 25 on two different branches, one of whi...

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Abstract

The invention provides an indirect type millimeter wave signal detector of silicon slot coupled T junctions. The detector comprises a coplane wave guide transmission line, slot coupling structures, a phase shifter, a single pole double throw switch, a T junction power divider, a T junction power combiner and an indirect type thermoelectric power sensor. The detector is produced based on high resistance Si substrate, wherein four slot coupling structures are located, two slot coupling structures at the upper side achieve the measuring of frequencies of signals. Two slot coupling structures at the lower side achieve the measuring of phases of signals. The phase shifter is arranged between the front and rear slots. The T junction power divider and the T junction power combiner are both composed of coplane wave guide transmission lines, fan shape defected structures and air bridges. The indirect thermoelectric power sensor comprises coplane wave guide transmission line, terminal resistors and a thermoelectric pile. The thermoelectric pile comprises two types of different semi-conductor arms in cascade connection. The structure can integrate the test of frequency, phase and power to substantially increase the efficiency of the detector.

Description

technical field [0001] The invention provides an indirect millimeter-wave signal detector of a silicon-based gap-coupled T-junction, which belongs to the technical field of micro-electro-mechanical systems (MEMS). Background technique [0002] With the continuous development of information science and technology, the requirements for signal detection are getting higher and higher. The signal detector is required to be simple in structure, low in cost, and high in accuracy. This poses a big challenge to signal detection. As we all know, accurately determining a signal requires three major parameters: frequency, phase and power, so the measurement of these three parameters is a very important task, and it can be said that it has very good potential application value in aerospace, microwave communication and other fields , in the low frequency stage, people have studied the test structure of these three parameters quite deeply, and various signal detectors have been able to mee...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R23/02G01R21/02G01R25/00
CPCG01R21/02G01R23/02G01R25/00
Inventor 廖小平褚晨蕾
Owner SOUTHEAST UNIV
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