Display panel and manufacturing method thereof and display device
A display panel, selected technology, applied in semiconductor/solid-state device manufacturing, optics, instruments, etc., can solve problems such as high off-state leakage current and leakage current, and achieve the effect of reducing off-state leakage current
Active Publication Date: 2017-06-13
XIAMEN TIANMA MICRO ELECTRONICS
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- Description
- Claims
- Application Information
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Problems solved by technology
However, the low-temperature polysilicon TFT has a higher off-state leakage current (off current) than the amorphous silicon TFT.
Method used
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Embodiment Construction
[0038] The present application relates to a display panel, which includes a thin-film transistor 1 (Thin-film transistor, TFT for short), figure 2 A schematic structural diagram of a thin film transistor 1 provided in the embodiment of the present application (the thin film transistor 1 is represented in a dashed box in the figure), the thin film transistor 1 includes a semiconductor layer 10, a gate 23, a source 24 and a drain 25, and the source 24 is connected to the data line (not shown in the figure), the drain 25 is connected to the pixel electrode 26, and the gate 23 is used to connect to the gate line (not shown in the figure); the semiconductor layer 10 includes a channel region 101, a light The doped region 102 and the heavily doped region 103 ; the lightly doped region 102 is located between the channel region 101 and the heavily doped region 103 .
[0039] Forming the lightly doped region 102 between the source / drain region and the channel region 101 of the polysil...
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Abstract
The invention belongs to the technical field of display and particularly relates to a display panel and a manufacturing method thereof and a display device. The display panel comprises a thin-film transistor, wherein the thin-film transistor comprises a semiconductor layer; the semiconductor layer comprises a channel region, a lightly doped region and a heavily doped region; and the lightly doped region is located between the channel region and the heavily doped region and is doped with elements for forming deep energy levels. The lightly doped region of the thin-film transistor is doped with the elements for forming the deep energy levels, so that the elements can play a donor role, can also play an acceptor role and can generate multiple times of ionizations to form multiple energy levels; after deep energy levels are generated through doping, electron-hole pairs generated by photoexcitation can be compounded through the deep energy levels, and free electrons / holes capable of participating in electric conduction are reduced, so that off-state leakage current of the TFT can be reduced.
Description
technical field [0001] The present application belongs to the field of display technology, and in particular, relates to a display panel, a method for preparing the display panel, and a display device. Background technique [0002] The display panel includes a liquid crystal display panel (Liquid Crystal Display, LCD) and an organic light emitting diode panel (OLED). [0003] For example, figure 1 It is a structural schematic diagram of an existing liquid crystal display panel, such as figure 1 As shown, the liquid crystal display panel includes a lower substrate 100 and an upper substrate 200 . A color filter (not shown) is usually arranged on the upper substrate 200, a thin film transistor is integrated on the lower substrate 100, and a liquid crystal layer 400 is added between the upper substrate 200 and the lower substrate 100. According to the display mode of the liquid crystal display panel, the liquid crystal layer 400 is composed of a corresponding liquid crystal ...
Claims
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Patent Timeline
Login to View More IPC IPC(8): H01L27/12H01L29/786H01L29/06H01L29/12H01L21/77H01L21/336G02F1/1362H01L27/32
CPCH01L27/1214H01L27/1222H01L27/1259H01L29/0684H01L29/12H01L29/66742H01L29/786G02F1/1362H01L21/77H01L2021/775H10K59/12
Inventor 刘博智
Owner XIAMEN TIANMA MICRO ELECTRONICS