GaN-based vertical transistor and preparation method thereof

Abstract

The invention discloses a GaN-based vertical transistor and a preparation method thereof. The GaN-based vertical transistor comprises an n type GaN substrate, an n type GaN epitaxial layer, a first p type GaN epitaxial layer, a groove, a gate region epitaxial laminated layer, a gate electrode, source electrodes and a drain electrode. The n type GaN substrate has first doping concentration; the n type GaN epitaxial layer has second doping concentration and is formed on the n type GaN substrate, and the second doping concentration is smaller than the first doping concentration. The first p type GaN epitaxial layer is located on the n type GaN epitaxial layer; the groove penetrates through the p type GaN epitaxial layer and extends into the n type GaN epitaxial layer; the gate region epitaxial laminated layer is formed in the groove and extends towards the two sides, and sequentially comprises a GaN epitaxial layer, a AlGaN epitaxial layer and a second p type GaN epitaxial layer from bottom to top. The gate electrode is formed at the position, in the groove, of the gate region epitaxial laminated layer; the source electrodes are located on the first p type GaN epitaxial layer and formed on the two sides of the gate region epitaxial laminated layer in the mode that a certain interval is kept between the source electrodes and the second p type GaN epitaxial layer. The drain electrode is located on the back face of the n type GaN substrate.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a GaN-based vertical transistor and a preparation method thereof. Background technique [0002] With the rapid development of information technology, high-power electronic devices such as power switches and power rectifiers have been widely used in various fields of the national economy. As a substitute for traditional silicon-based power devices, power devices based on the third-generation wide-bandgap semiconductor GaN materials have attracted much attention due to their excellent material properties and device structures. GaN material has a large band gap and electron mobility, good thermal stability and chemical stability, so it has a wide application prospect in the field of high power and high frequency, and has attracted attention and research. GaN power transistors are popular candidates for power conversion system applications due to their high efficiency and small size. ...

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