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Method for directly preparing layer-number-controllable graphene on insulating substrates

A technology on an insulating substrate and an insulating substrate, which is applied in the field of directly preparing graphene with a controllable layer number on an insulating substrate, which can solve problems such as reducing the performance of graphene devices, achieve ingenious design, improve performance, and increase production efficiency Effect

Inactive Publication Date: 2017-07-07
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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Problems solved by technology

However, although graphene with different layers can be obtained based on the above method, the obtained graphene is grown on the surface of the nickel-copper alloy. In practical applications, the obtained graphene needs to be transferred to an insulating substrate to achieve further In the application of multilayer graphene transfer, defects, impurities, wrinkles and cracks are inevitably introduced, which may degrade the performance of graphene devices.

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  • Method for directly preparing layer-number-controllable graphene on insulating substrates
  • Method for directly preparing layer-number-controllable graphene on insulating substrates
  • Method for directly preparing layer-number-controllable graphene on insulating substrates

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Embodiment Construction

[0034] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0035] see Figure 1 to Figure 9 . It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, so that only the components related to the present invention are shown in the diagrams rather than the number, shape and Dimensional drawing, the type, quantity and proportion of each component can be changed arbitrarily during actual implementation, and the...

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Abstract

The invention provides a method for directly preparing graphene with a controllable layer number on an insulating substrate, using ion implantation to precisely control the dosage of carbon ions, and directly preparing graphene with different layers on various insulating substrates. First deposit a metal nickel film on an insulating substrate, then use ion implantation to implant carbon ion doses corresponding to different layers into the nickel film, and then deposit a relatively thick copper film on the nickel. At high temperature, nickel and copper will dissolve together, and a large amount of copper will continuously push carbon down, and finally push it out from nickel, forming graphene at the interface between the insulating substrate and the nickel-copper alloy. The present invention can directly obtain high-quality continuous graphene with a large area and a controllable number of layers on different insulating substrates without further transfer, which greatly improves the quality of graphene. The high-temperature synthesis time of the present invention is extremely short, and can greatly Improving the preparation efficiency provides an effective and feasible way for the industrial preparation of high-quality graphene on insulators and the application of graphene.

Description

technical field [0001] The invention relates to a method for preparing graphene, in particular to a method for directly preparing graphene with a controllable layer number on an insulating substrate. Background technique [0002] Graphene is the first stable two-dimensional crystal to be successfully prepared and is considered to be the basic material for other allotropes of carbon. The superior properties of graphene beyond graphite and carbon nanotubes have aroused a great wave of exploration in nanomechanics, nanoelectronics and nanophotonics. Therefore, since the discovery of graphene in 2004, research on graphene synthesis methods has never stopped. Graphene with different layers has different properties. For example, single-layer graphene has high light transmittance, high conductivity, etc., and double-layer graphite Alkenes can open the bandgap under the action of a magnetic field. [0003] The main problem facing the synthesis of graphene at present is to control ...

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Application Information

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IPC IPC(8): C01B32/20H01L21/265H01L21/324
CPCH01L21/265H01L21/324
Inventor 狄增峰汪子文王刚郑晓虎戴家赟薛忠营张苗王曦
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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