The utility model relates to the technical field of IGBT (Insulated Gate Bipolar Translator) modules, in particular to an IGBT module. The IGBT module comprises a shell, an IGBT
chip and an aluminum-based
copper-clad plate; the aluminum-based
copper-clad plate comprises an aluminum plate, an oxidation film layer, a
silicon carbide layer, a
nickel-
copper alloy layer and a first copper layer, the oxidation film
layers are formed on the two sides of the aluminum plate, the
silicon carbide layers are formed on the oxidation film
layers on the two sides of the aluminum plate, the
nickel-
copper alloy layers are formed on the
silicon carbide layers on the two sides of the aluminum plate, and the first copper layers are formed on the
nickel-
copper alloy layers on the two sides of the aluminum plate. The IGBT
chip is fixedly arranged on the first copper layer of the aluminum-based copper-clad plate, and the shell is fixedly arranged on the aluminum-based copper-clad plate and covers the IGBT
chip. The IGBT chip is fixedly arranged on the first copper layer of the aluminum-based copper-clad plate, a
ceramic substrate and a copper heat conduction block are not used, a copper layer and a
soldering tin layer between the
ceramic substrate and the copper heat conduction block are omitted, the cost of the
ceramic substrate, the copper heat conduction block and the attaching technology is saved, the cost is low, the technology is simple, the production yield is improved, heat conduction resistance caused by a multi-layer structure is avoided, and the heat conduction efficiency is high.