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Nickel-copper (111) alloy single crystal film and preparation method thereof

A single crystal thin film and metal thin film technology, applied in the field of preparation of nickel copper alloy single crystal thin film and nickel copper alloy single crystal thin film, can solve problems such as low quality of graphene, and achieve improved kinetic energy, improved quality, and efficient catalytic growth. Effect

Pending Publication Date: 2018-11-06
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In order to solve the problem of low quality graphene caused by the growth material of graphene existing in the above-mentioned prior art, the present invention aims to provide a preparation method of a nickel-copper (111) alloy single crystal film and the nickel-copper (111) alloy obtained therefrom ) Alloy single crystal film

Method used

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  • Nickel-copper (111) alloy single crystal film and preparation method thereof
  • Nickel-copper (111) alloy single crystal film and preparation method thereof
  • Nickel-copper (111) alloy single crystal film and preparation method thereof

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Effect test

Embodiment 1

[0030] Step a: Choose a 2-inch sapphire slice.

[0031] Step b: Clean the sapphire sheet, put it in deionized water for 30 minutes, and blow it with a high-purity nitrogen gun; put it in acetone solution for 30 minutes, and blow it with a high-purity nitrogen gun.

[0032] Step c: Put the sapphire sheet into a muffle furnace for high-temperature annealing at an annealing temperature of 1100°C for 12 hours, then naturally cool down to room temperature to obtain a sapphire substrate.

[0033] Step d: Using the method of magnetron sputtering, Al on the crystal plane of the sapphire substrate 2 o 3 Deposit a 600nm thick metal film on (0001), the sapphire substrate is heated to a temperature of 200°C, the sputtering rate (deposition rate) is 20nm / min, the argon gas is 0.5pa, and the power is 400w to obtain a sapphire substrate deposited with a nickel-copper alloy (nickel copper / sapphire).

[0034] Step e: annealing the nickel-copper / sapphire. Put the sapphire substrate into a c...

Embodiment 2

[0041] Step a: Choose a 2-inch sapphire slice.

[0042] Step b: Clean the sapphire sheet, put it in deionized water for 30 minutes, and blow it with a high-purity nitrogen gun; put it in acetone solution for 30 minutes, and blow it with a high-purity nitrogen gun.

[0043] Step c: Put the sapphire sheet into a muffle furnace for high-temperature annealing at an annealing temperature of 1100°C for 12 hours, then naturally cool down to room temperature to obtain a sapphire substrate.

[0044] Step d: Using molecular beam epitaxy (MBE), deposit a 50nm thick metal film on the crystal plane Al2O3(0001) of the sapphire substrate, wherein the proportion of nickel atoms to the total number of atoms is 1%, and the sapphire substrate is heated to The temperature is 100° C., and the sputtering rate is 0.1 nm / min to obtain a sapphire substrate (nickel-copper / sapphire) deposited with nickel-copper alloy.

[0045] Step e: annealing the nickel-copper / sapphire. Put the sapphire substrate in...

Embodiment 3

[0048] Step a: Choose a 6-inch sapphire slice.

[0049] Step b: Clean the sapphire sheet, put it in deionized water for 30 minutes, and blow it with a high-purity nitrogen gun; put it in acetone solution for 30 minutes, and blow it with a high-purity nitrogen gun.

[0050] Step c: Put the sapphire sheet into a muffle furnace for high-temperature annealing at an annealing temperature of 1100°C for 12 hours, then naturally cool down to room temperature to obtain a sapphire substrate.

[0051] Step d: Using the method of magnetron sputtering, Al on the crystal plane of the sapphire substrate 2 o 3 Deposit a 5000nm thick metal thin film on (0001), wherein the proportion of nickel atoms to the total number of atoms is 40%, the sapphire substrate is heated to a temperature of 900°C, the sputtering rate is 100nm / min, the argon gas is 0.5pa, and the power is 50w, and the deposition is obtained Sapphire substrate with nickel-copper alloy (nickel-copper / sapphire).

[0052] Step e: an...

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Abstract

The invention relates to a method for preparing a nickel-copper (111) alloy single crystal film. The method comprises: S1, providing a sapphire base, S2, depositing a metal film with thickness of 50 to 5000 nm on the crystal plane Al2O3 (0001) of the sapphire base to obtain a sapphire substrate on which a nickel-copper alloy is deposited, wherein the metal film is an alloy thin film composed of 1-40% of nickel atoms, and copper atoms, and S3, putting the sapphire substrate in a chemical vapor deposition furnace and carrying out annealing treatment in a gas atmosphere of argon gas and hydrogengas to obtain a single crystal thin film with (111) crystal orientation. The invention also relates to a nickel-copper (111) alloy single crystal film obtained by the method. The nickel-copper (111) alloy single crystal film greatly improves the performances of graphene and lays a foundation for the application of graphene in the field of microelectronics.

Description

technical field [0001] The invention relates to an alloy single crystal thin film, more particularly to a preparation method of a nickel-copper (111) alloy single crystal thin film and the nickel-copper (111) alloy single crystal thin film obtained therefrom. Background technique [0002] Graphene materials have excellent photoelectric properties, and will have important applications in the fields of microelectronics, energy, and biological detection in the future, and have attracted widespread attention from all walks of life. At present, the growth material of graphene is mainly metal copper foil material. Due to the rough surface, large undulations and weak catalytic ability of metal copper foil, the quality of graphene grown on the surface of copper foil substrate is low, which seriously limits its application in the field of microelectronics in the future. Contents of the invention [0003] In order to solve the problem of low quality graphene caused by the growth ma...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/52C30B29/64C30B25/18C30B33/02
CPCC30B25/18C30B29/52C30B29/64C30B33/02
Inventor 张学富王浩敏吴天如谢晓明
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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