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Vacuum sputtering electrode of ceramic thermistor and manufacturing method thereof

A thermistor and vacuum sputtering technology, which is applied in the direction of resistance terminals/electrodes, resistors with positive temperature coefficients, sputtering plating, etc., can solve problems such as unstable electrical properties, and achieve good consistency and low cost, effect of good electrical conductivity

Active Publication Date: 2015-10-28
JIANGSU NEW LINZHI ELECTRONIC TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the deficiencies in the prior art above, the purpose of the present invention is to provide a ceramic thermistor vacuum sputtering electrode and its manufacturing method, to solve the problem of unstable electrical properties generated under the existing vacuum sputtering electrode process

Method used

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  • Vacuum sputtering electrode of ceramic thermistor and manufacturing method thereof
  • Vacuum sputtering electrode of ceramic thermistor and manufacturing method thereof

Examples

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Embodiment 1

[0024] combine figure 1 , the ceramic thermistor vacuum sputtering electrode that the present embodiment relates to, its transition layer 2, barrier layer 3 and conductive layer 4 sputtered successively on the substrate 1 surface, wherein transition layer 2 is the nickel-chromium alloy of thickness 4000nm, In the nickel-chromium alloy, nickel is 80% by mass percentage, the barrier layer 3 is nickel-copper alloy with a thickness of 4000nm, in the nickel-copper alloy, nickel is 25% by mass percentage, and the conductive layer 4 is silver with a thickness of 2000nm.

[0025] The specific manufacturing process of the ceramic thermistor is as follows. After batching, wet ball milling, pre-firing, secondary wet ball milling, granulation, molding, and sintering, the sputtered substrate 1 is obtained, and the outer dimension of the substrate 1 is Φ8. 75×2.7mm. Since the surface state of the substrate 1 has a great influence on the adhesion, contamination on the surface of the substra...

Embodiment 2

[0027] Ceramic thermistor vacuum sputtering electrode, the transition layer, barrier layer and conductive layer sputtered successively on the surface of the substrate, wherein the transition layer is a nickel-chromium alloy with a thickness of 4500nm, and in the nickel-chromium alloy by mass percentage, nickel is 81%, the barrier layer is a nickel-copper alloy with a thickness of 4500nm, in the nickel-copper alloy, nickel is 29%, and the conductive layer is silver with a thickness of 2500nm. Its manufacture process is with embodiment 1.

Embodiment 3

[0029] Ceramic thermistor vacuum sputtering electrode, the transition layer, barrier layer and conductive layer sputtered successively on the surface of the substrate, wherein the transition layer is a nickel-chromium alloy with a thickness of 5000nm, and in the nickel-chromium alloy by mass percentage, nickel is 85%, the barrier layer is a nickel-copper alloy with a thickness of 5000nm, in the nickel-copper alloy, nickel is 30%, and the conductive layer is silver with a thickness of 3000nm. Its manufacture process is with embodiment 1.

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Abstract

The invention discloses a vacuum sputtering electrode of a ceramic thermistor. The vacuum sputtering electrode comprises a transition layer, a barrier layer and a conducting layer which are sequentially sputtered on the surface of a substrate. The transition layer is nickel-chrome alloy with the thickness ranging from 4000 nm to 5000 nm, and the nickel-chrome alloy comprises, by mass, 80-85% of nickel. The barrier layer is nickel-copper alloy with the thickness ranging from 4000 nm to 5000 nm, and the nickel-copper alloy comprises, by mass, 25-30% of nickel. The conducting layer is silver with the thickness ranging from 2000 nm to 3000 nm. The invention further discloses a manufacturing method of the vacuum sputtering electrode of the ceramic thermistor. Firstly, vacuum sputtering is performed three times to form the nickel-chrome alloy transition layer; then, sputtering is performed three times to form the nickel-copper alloy barrier layer; finally, sputtering is performed two times to form the silver conducting layer. The ceramic thermistor with the vacuum sputtering electrode is stable in electrical performance, high in production efficiency and free of pollution, and the percent of pass can reach 100% in key electrical performance tests.

Description

technical field [0001] The invention relates to a resistor electrode and a manufacturing method thereof, in particular to a ceramic thermistor vacuum sputtering electrode and a manufacturing method thereof. Background technique [0002] In recent years, ceramic PTC thermistors, as an important self-healing current-limiting element, have received more and more attention and development. High voltage resistance induction: 650VAC, initial current 1.1A, power on for 1 minute, power off for 10 minutes, repeat 10 times, resistance value change rate is less than 20%, and failure mode: 650VAC, initial current 10A, power on for 30 minutes, times 1 Second-rate. During the entire failure mode test, the PTC thermistor is allowed to be in an open circuit or high resistance state, but no low resistance, open flame, or desoldering should occur during the entire test. Performance fluctuations often occur due to the combination of the ohmic electrode layer and the ceramic substrate. [00...

Claims

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Application Information

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IPC IPC(8): H01C7/02H01C1/14C23C14/34C23C14/14
Inventor 何正安汪鹰孙振华
Owner JIANGSU NEW LINZHI ELECTRONIC TECH CO LTD
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