Laser annealing device and annealing method thereof

Abstract

The invention discloses a laser annealing device and an annealing method thereof. The laser annealing device comprises a laser light source system, a laser adjustment system, a temperature monitoring system and a central control system, and is characterized in that the laser adjustment system is connected with the laser light source system and located above a silicon wafer, the temperature monitoring system is located above the silicon wafer and performs real-time measurement on the temperature of a light spot at the surface of the silicon wafer, and the central control system is connected with the laser light source system, the laser adjustment system, the temperature monitoring system and a slide holder. The laser annealing device provides laser light with different wavelengths through setting a plurality of independent lasers so as to perform joint annealing on the silicon wafer and performs annealing on the silicon wafer through selecting optimal process parameter sets, and the laser light with different wavelengths are complementary, thereby not only achieving an optimal annealing temperature, but also well suppressing an image effect at the surface of the silicon wafer; and the laser annealing device improves the uniformity and controllability of annealing through a feedback mechanism of the temperature monitoring system and an adjustment mechanism of the central control system, thereby reducing the heat budget, reducing heat diffusion and improving the process adaptability of the annealing device.

Description

technical field [0001] The invention relates to the technical field of laser annealing, in particular to a laser annealing device and an annealing method thereof. Background technique [0002] In the manufacture of semiconductor devices, when ion implantation is performed in a predetermined area on the back of a silicon substrate, P ions are usually implanted in the deep layer and B ions are implanted in the shallow layer, and the solubility of B ions is higher than that of P ions in the deep layer. Therefore, the use of this ion implantation method is likely to damage the crystallinity of the surface of the silicon substrate, making the arrangement of ions disorderly. In response to the above problems, laser annealing is usually used for semiconductor films formed on insulating substrates such as glass to achieve crystallization or increase crystallinity, and the result of laser annealing is to convert amorphous materials into polycrystalline or In the single crystal state...

AI Technical Summary

Problems solved by technology

However, the existing laser annealing technology only uses a laser of one wavelength for annealing, which inevitably causes the problem of the pattern effect on the surface of the silicon wafer, which will have an important impact on the consistency of device performance, thereby reducing the optical efficiency of the silicon wafer. Engraving and Stability

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